Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

Paul D. Kirsch; Manuel Quevedo-Lopez; Siddarth A. Krishnan; S. C. Song; Rino Choi; Prashant Majhi; Yoshi Senzaki; Gennadi Bersuker; Byoung Hun Lee

doi:10.1149/1.2209326

Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability

Paul D. Kirsch^*, Manuel Quevedo-Lopez, Siddarth A. Krishnan, S. C. Song, Rino Choi, Prashant Majhi, Yoshi Senzaki, Gennadi Bersuker, Byoung Hun Lee

^*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

6 Citas (Scopus)

Resumen

Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO₂ formed from TEMAHf and O₃ was found to reach a scaling limit near T_phys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO ₂ is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V _TH and I_d stability during constant voltage stress. HfO₂ attributes include the following: EOT=1.0 nm, >100× J_g reduction vs. SiO₂/PolySi, high field mobility of 82% universal SiO₂ and ∼20 mV of ΔV_TH after 1000s stress at 1.8V. Similar results can be obtained for (HfO₂) _x(SiO₂)_1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

Idioma original	Inglés
Título de la publicación alojada	Atomic Layer Deposition
Editorial	Electrochemical Society Inc.
Páginas	15-28
Número de páginas	14
Edición	10
ISBN (versión digital)	9781566774437
DOI	https://doi.org/10.1149/1.2209326
Estado	Publicada - 2006
Publicado de forma externa	Sí
Evento	Atomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, Estados Unidos Duración: 16 oct. 2005 → 21 oct. 2005

Serie de la publicación

Nombre	ECS Transactions
Número	10
Volumen	1
ISSN (versión impresa)	1938-5862
ISSN (versión digital)	1938-6737

Conferencia

Conferencia	Atomic Layer Deposition - 208th Electrochemical Society Meeting
País/Territorio	Estados Unidos
Ciudad	Los Angeles, CA
Período	16/10/05 → 21/10/05

Acceder al documento

10.1149/1.2209326

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Kirsch, P. D., Quevedo-Lopez, M., Krishnan, S. A., Song, S. C., Choi, R., Majhi, P., Senzaki, Y., Bersuker, G., & Lee, B. H. (2006). Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability. En Atomic Layer Deposition (10 ed., pp. 15-28). (ECS Transactions; Vol. 1, N.º 10). Electrochemical Society Inc.. https://doi.org/10.1149/1.2209326

@inproceedings{8a35157df94041e38e0691940f47b170,

title = "Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability",

abstract = "Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.",

author = "Kirsch, {Paul D.} and Manuel Quevedo-Lopez and Krishnan, {Siddarth A.} and Song, {S. C.} and Rino Choi and Prashant Majhi and Yoshi Senzaki and Gennadi Bersuker and Lee, {Byoung Hun}",

year = "2006",

doi = "10.1149/1.2209326",

language = "Ingl{\'e}s",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "15--28",

booktitle = "Atomic Layer Deposition",

edition = "10",

note = "Atomic Layer Deposition - 208th Electrochemical Society Meeting ; Conference date: 16-10-2005 Through 21-10-2005",

}

Kirsch, PD, Quevedo-Lopez, M, Krishnan, SA, Song, SC, Choi, R, Majhi, P, Senzaki, Y, Bersuker, G & Lee, BH 2006, Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability. En Atomic Layer Deposition. 10 ed., ECS Transactions, n.º 10, vol. 1, Electrochemical Society Inc., pp. 15-28, Atomic Layer Deposition - 208th Electrochemical Society Meeting, Los Angeles, CA, Estados Unidos, 16/10/05. https://doi.org/10.1149/1.2209326

Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability. / Kirsch, Paul D.; Quevedo-Lopez, Manuel; Krishnan, Siddarth A. et al.
Atomic Layer Deposition. 10. ed. Electrochemical Society Inc., 2006. p. 15-28 (ECS Transactions; Vol. 1, N.º 10).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

AU - Kirsch, Paul D.

AU - Quevedo-Lopez, Manuel

AU - Krishnan, Siddarth A.

AU - Song, S. C.

AU - Choi, Rino

AU - Majhi, Prashant

AU - Senzaki, Yoshi

AU - Bersuker, Gennadi

AU - Lee, Byoung Hun

PY - 2006

Y1 - 2006

N2 - Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

AB - Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

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M3 - Contribución a la conferencia

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T3 - ECS Transactions

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BT - Atomic Layer Deposition

PB - Electrochemical Society Inc.

T2 - Atomic Layer Deposition - 208th Electrochemical Society Meeting

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ER -