@inproceedings{55df3643ccfe41808fd03b1971cc1a63,
title = "Charge trapping dependence on the physical structure of ultra-thin ALD-HfSiON/TiN gate stacks",
abstract = "Positive bias temperature instability (PBTI) is investigated in ultra-thin higb-κ films as a function of dielectric thickness on two different interfaces: SiO2 and SiON. It is shown that charge trapping-induced threshold voltage (VTH) instability is exponentially dependent on dielectric thickness (or equivalent oxide thickness [EOT]) in the thickness range investigated. We propose that the significantly reduced charge trapping at thicknesses less than 2,0 nm is due to a change in the physical structure from suppressed crystallization at lesser thicknesses, resulting in reduced trap density. It is also observed that the SiON interface shows higher VTH instability than the corresponding SiO2 interface, while thickness dependence is the same for both.",
author = "Krishnan, {Siddarth A.} and Quevedo-Lopez, {M. A.} and Rino Choi and Kirsch, {Paul D.} and Chadwin Young and Rusty Harris and Peterson, {Jeff J.} and Li, {Hong Jyh} and Lee, {Byoung Hun} and Lee, {Jack C.}",
year = "2005",
doi = "10.1109/IRWS.2005.1609570",
language = "Ingl{\'e}s",
isbn = "0780389921",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "89--90",
booktitle = "2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005",
address = "Estados Unidos",
note = "2005 IEEE International Integrated Reliability Workshop, IIRW 2005 ; Conference date: 17-10-2005 Through 20-10-2005",
}