Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

P. Bolshakov; R. A. Rodriguez-Davila; M. Quevedo-Lopez; C. D. Young

doi:10.1109/SNW50361.2020.9131625

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

P. Bolshakov, R. A. Rodriguez-Davila, M. Quevedo-Lopez, C. D. Young^*

^*Autor correspondiente de este trabajo

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

Idioma original	Inglés
Título de la publicación alojada	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	73-74
Número de páginas	2
ISBN (versión digital)	9781728197357
DOI	https://doi.org/10.1109/SNW50361.2020.9131625
Estado	Publicada - jun. 2020
Evento	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, Estados Unidos Duración: 13 jun. 2020 → 14 jun. 2020

Serie de la publicación

Nombre	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conferencia

Conferencia	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
País/Territorio	Estados Unidos
Ciudad	Honolulu
Período	13/06/20 → 14/06/20

Nota bibliográfica

Publisher Copyright:
© 2020 IEEE.

Acceder al documento

10.1109/SNW50361.2020.9131625

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

Bolshakov, P., Rodriguez-Davila, R. A., Quevedo-Lopez, M., & Young, C. D. (2020). Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs. En 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 (pp. 73-74). Artículo 9131625 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW50361.2020.9131625

@inproceedings{9ff52de612d740bfaf4b571ddf89342a,

title = "Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs",

abstract = "Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.",

keywords = "AlO, HCI, PBI, TFTs, V, ZnO",

author = "P. Bolshakov and Rodriguez-Davila, {R. A.} and M. Quevedo-Lopez and Young, {C. D.}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 ; Conference date: 13-06-2020 Through 14-06-2020",

year = "2020",

month = jun,

doi = "10.1109/SNW50361.2020.9131625",

language = "Ingl{\'e}s",

series = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "73--74",

booktitle = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

address = "Estados Unidos",

}

Bolshakov, P, Rodriguez-Davila, RA, Quevedo-Lopez, M & Young, CD 2020, Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs. En 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020., 9131625, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Institute of Electrical and Electronics Engineers Inc., pp. 73-74, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Honolulu, Estados Unidos, 13/06/20. https://doi.org/10.1109/SNW50361.2020.9131625

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs. / Bolshakov, P.; Rodriguez-Davila, R. A.; Quevedo-Lopez, M. et al.
2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 73-74 9131625 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

AU - Bolshakov, P.

AU - Rodriguez-Davila, R. A.

AU - Quevedo-Lopez, M.

AU - Young, C. D.

PY - 2020/6

Y1 - 2020/6

N2 - Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

AB - Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

KW - AlO

KW - HCI

KW - PBI

KW - TFTs

KW - V

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=85092128963&partnerID=8YFLogxK

U2 - 10.1109/SNW50361.2020.9131625

DO - 10.1109/SNW50361.2020.9131625

M3 - Contribución a la conferencia

AN - SCOPUS:85092128963

T3 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

SP - 73

EP - 74

BT - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Y2 - 13 June 2020 through 14 June 2020

ER -

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

Resumen

Serie de la publicación

Conferencia

Nota bibliográfica

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto