TY - JOUR
T1 - Deep UV Sensors Enabling Solar-Blind Flame Detectors for Large-Area Applications
AU - Avila-Avendano, Carlos
AU - Pintor-Monroy, Maria I.
AU - Ortiz-Conde, Adelmo
AU - Caraveo-Frescas, Jesus A.
AU - Quevedo-Lopez, Manuel A.
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2021/7/1
Y1 - 2021/7/1
N2 - Large-Area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, and the CMOS inverter amplifier exhibits a gain of 210 V/V. The Ga2 O3-based sensors were integrated on the same substrate depositing the films using magnetron sputtering at room temperature, ensuring its compatibility with large-Area applications. The responsivity of discrete Ga2 O3 sensors was evaluated at different wavelengths in the deep-ultraviolet and visible ranges, and showed a maximum responsivity of 51 A/W for a wavelength of 232 nm, with a deep-ultraviolet to visible light rejection ratio of approximately 102. The active pixel sensor was implemented as flame detector resulting in an output voltage signal of up to 2 V when the system was exposed to a flame under regular background illumination conditions.
AB - Large-Area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, and the CMOS inverter amplifier exhibits a gain of 210 V/V. The Ga2 O3-based sensors were integrated on the same substrate depositing the films using magnetron sputtering at room temperature, ensuring its compatibility with large-Area applications. The responsivity of discrete Ga2 O3 sensors was evaluated at different wavelengths in the deep-ultraviolet and visible ranges, and showed a maximum responsivity of 51 A/W for a wavelength of 232 nm, with a deep-ultraviolet to visible light rejection ratio of approximately 102. The active pixel sensor was implemented as flame detector resulting in an output voltage signal of up to 2 V when the system was exposed to a flame under regular background illumination conditions.
KW - Flame detector
KW - UV detectors
KW - gallium oxide
KW - poly-Si thin-film transistors
UR - http://www.scopus.com/inward/record.url?scp=85104182330&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2021.3071980
DO - 10.1109/JSEN.2021.3071980
M3 - Artículo
AN - SCOPUS:85104182330
SN - 1530-437X
VL - 21
SP - 14815
EP - 14821
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 13
M1 - 9398940
ER -