Design and characterization of a four-quadrant detector and its application to shape recovering system

A.V. Marquina, L.A. González, J.R. Noriega

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Resumen

This work describes the characterization of a quadrant-type silicon photodiode that detect visible light and is designed using CMOS integrated circuit technology, peaking in 550 nm wavelength. The quadrant detector (QD) derives photocurrents by projecting a spot of light on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm2 per active area by each quadrant and the size of the device is 9mm2. Its transition region between the adjacent cells had a narrow width of 30 μm. The technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity is described. In addition, the performance on applying the QD to shape a recovering system is investigated.

Idioma originalInglés
Título de la publicación alojadaProceedings of SPIE - The International Society for Optical Engineering
DOI
EstadoPublicada - 2006
EventoInfrared and Photoelectronic Imagers and Detector Devices II - San Diego, CA, Estados Unidos
Duración: 13 ago. 200614 ago. 2006

Serie de la publicación

NombreProceedings of SPIE - The International Society for Optical Engineering
Volumen6294
ISSN (versión impresa)0277-786X

Conferencia

ConferenciaInfrared and Photoelectronic Imagers and Detector Devices II
País/TerritorioEstados Unidos
CiudadSan Diego, CA
Período13/08/0614/08/06

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