TY - GEN
T1 - Dielectric properties of PMMA-SiO2 hybrid films
AU - Morales-Acosta, M. D.
AU - Quevedo-Lopez, M. A.
AU - Alshareef, H. N.
AU - Gnade, B.
AU - Ramirez-Bon, R.
PY - 2010
Y1 - 2010
N2 - Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond.
AB - Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond.
KW - Capacitor
KW - Flexible electronics
KW - Hybrid gate dielectric
KW - Organic-inorganic materials
UR - http://www.scopus.com/inward/record.url?scp=77951014738&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.644.25
DO - 10.4028/www.scientific.net/MSF.644.25
M3 - Contribución a la conferencia
SN - 087849281X
SN - 9780878492817
T3 - Materials Science Forum
SP - 25
EP - 28
BT - Advanced Electron Microscopy and Nanomaterials
PB - Trans Tech Publications Ltd
T2 - 1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09
Y2 - 29 September 2009 through 2 October 2009
ER -