Dipole moment model explaining nFET vt tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics

P. Sivasubramani; T. S. Böscke; J. Huang; C. D. Young; P. D. Kirsch; S. A. Krishnan; M. A. Quevedo-Lopez; S. Govindarajan; B. S. Ju; H. R. Harris; D. J. Lichtenwalner; J. S. Jur; A. I. Kingon; J. Kim; B. E. Gnade; R. M. Wallace; G. Bersuker; B. H. Lee; R. Jammy

doi:10.1109/VLSIT.2007.4339730

Dipole moment model explaining nFET v_t tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics

P. Sivasubramani^*, T. S. Böscke, J. Huang, C. D. Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R. Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, R. Jammy

^*Autor correspondiente de este trabajo

Departamento de Investigación en Polímeros y Materiales

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

83 Citas (Scopus)

Resumen

A dipole moment model explaining V_t tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants tune V_t in the range of 250-600 mV. V _t tuning is found to be proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds at the high-k/SiO ₂ interface. The magnitude of this interfacial dipole moment is determined by the electronegativities and ionic radii of the RE cations. LaO_x is the most effective dopant based on V_t, mobility, and reliability.

Idioma original	Inglés
Número de artículo	4339730
Páginas (desde-hasta)	68-69
Número de páginas	2
Publicación	Digest of Technical Papers - Symposium on VLSI Technology
DOI	https://doi.org/10.1109/VLSIT.2007.4339730
Estado	Publicada - 2007
Evento	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japón Duración: 12 jun. 2007 → 14 jun. 2007

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10.1109/VLSIT.2007.4339730

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Sivasubramani, P., Böscke, T. S., Huang, J., Young, C. D., Kirsch, P. D., Krishnan, S. A., Quevedo-Lopez, M. A., Govindarajan, S., Ju, B. S., Harris, H. R., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I., Kim, J., Gnade, B. E., Wallace, R. M., Bersuker, G., Lee, B. H., & Jammy, R. (2007). Dipole moment model explaining nFET v_t tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics. Digest of Technical Papers - Symposium on VLSI Technology, 68-69. Artículo 4339730. https://doi.org/10.1109/VLSIT.2007.4339730

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title = "Dipole moment model explaining nFET vt tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics",

abstract = "A dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants tune Vt in the range of 250-600 mV. V t tuning is found to be proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds at the high-k/SiO 2 interface. The magnitude of this interfacial dipole moment is determined by the electronegativities and ionic radii of the RE cations. LaOx is the most effective dopant based on Vt, mobility, and reliability.",

author = "P. Sivasubramani and B{\"o}scke, {T. S.} and J. Huang and Young, {C. D.} and Kirsch, {P. D.} and Krishnan, {S. A.} and Quevedo-Lopez, {M. A.} and S. Govindarajan and Ju, {B. S.} and Harris, {H. R.} and Lichtenwalner, {D. J.} and Jur, {J. S.} and Kingon, {A. I.} and J. Kim and Gnade, {B. E.} and Wallace, {R. M.} and G. Bersuker and Lee, {B. H.} and R. Jammy",

year = "2007",

doi = "10.1109/VLSIT.2007.4339730",

language = "Ingl{\'e}s",

pages = "68--69",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

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Sivasubramani, P, Böscke, TS, Huang, J, Young, CD, Kirsch, PD, Krishnan, SA, Quevedo-Lopez, MA, Govindarajan, S, Ju, BS, Harris, HR, Lichtenwalner, DJ, Jur, JS, Kingon, AI, Kim, J, Gnade, BE, Wallace, RM, Bersuker, G, Lee, BH & Jammy, R 2007, 'Dipole moment model explaining nFET v_t tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics', Digest of Technical Papers - Symposium on VLSI Technology, pp. 68-69. https://doi.org/10.1109/VLSIT.2007.4339730

TY - JOUR

T1 - Dipole moment model explaining nFET vt tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics

AU - Sivasubramani, P.

AU - Böscke, T. S.

AU - Huang, J.

AU - Young, C. D.

AU - Kirsch, P. D.

AU - Krishnan, S. A.

AU - Quevedo-Lopez, M. A.

AU - Govindarajan, S.

AU - Ju, B. S.

AU - Harris, H. R.

AU - Lichtenwalner, D. J.

AU - Jur, J. S.

AU - Kingon, A. I.

AU - Kim, J.

AU - Gnade, B. E.

AU - Wallace, R. M.

AU - Bersuker, G.

AU - Lee, B. H.

AU - Jammy, R.

PY - 2007

Y1 - 2007

N2 - A dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants tune Vt in the range of 250-600 mV. V t tuning is found to be proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds at the high-k/SiO 2 interface. The magnitude of this interfacial dipole moment is determined by the electronegativities and ionic radii of the RE cations. LaOx is the most effective dopant based on Vt, mobility, and reliability.

AB - A dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants tune Vt in the range of 250-600 mV. V t tuning is found to be proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds at the high-k/SiO 2 interface. The magnitude of this interfacial dipole moment is determined by the electronegativities and ionic radii of the RE cations. LaOx is the most effective dopant based on Vt, mobility, and reliability.

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U2 - 10.1109/VLSIT.2007.4339730

DO - 10.1109/VLSIT.2007.4339730

M3 - Artículo de la conferencia

AN - SCOPUS:40949130851

SN - 0743-1562

SP - 68

EP - 69

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339730

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

Y2 - 12 June 2007 through 14 June 2007

ER -