DONOR-ACCEPTOR INTERACTION IN INDIUM ARSENIDE DOPED WITH CADMIUM AND TELLURIUM.

The electrical conductivity and Hall coefficient of InAs crystals, doped separately and simultaneously with Cd and Te to give concentrations 10**1**8-10**2**0 cm** minus **3, were measured at T equals 77 degree K. It is shown that in the case of compensated samples the dependence of the electron density on the composition is described by n equals f//1(N//D minus N//A) and the corresponding dependence of the hole density is p equals f//2(N//a minus N//D), where the functions f//1 and f//2 were the same as for the doping with one impurity. An analysis indicates that beginning from Cd and Te concentrations of 10**1**9 cm** minus **3, the majority of the impurities are in the bound electrically neutral form of donor-acceptor pairs.