Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications

A. Carrillo-Castillo*, F. S. Aguirre-Tostado, A. Salas-Villasenor, I. Mejia, B. E. Gnade, M. Sotelo-Lerma, M. A. Quevedo-Lopez

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

8 Citas (Scopus)

Resumen

Lead sulfide (PbS) thin films were prepared by chemical bath deposition (CBD) as function of deposition time, pH and deposition rate and the impact of the resulting film structure on the thin film transistor (TFT) electrical characteristics was evaluated. Structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy respectively (SEM). The deposited films show a cubic phase (galena) with an average crystallite size of ~25 nm. Three different PbS deposition conditions were evaluated in TFTs using source and drain gold contacts. The best electrical performance was observed for films deposited at high deposition rates. These transistors, showed field effect mobility and threshold voltage of ~3×10-3 cm2/V-s and ~6 V, respectively.

Idioma originalInglés
Páginas (desde-hasta)105-111
Número de páginas7
PublicaciónChalcogenide Letters
Volumen10
N.º3
EstadoPublicada - 2013

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