Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young, R. Campbell, S. Daasa, S. Benton, R. Rodriguez Davila, I. Mejia, M. Quevedo-Lopez

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

3 Citas (Scopus)

Resumen

We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

Idioma originalInglés
Título de la publicación alojada2015 IEEE International Integrated Reliability Workshop
Subtítulo de la publicación alojadaFinal Report, IIRW 2015
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas34-36
Número de páginas3
ISBN (versión digital)9781467373968
DOI
EstadoPublicada - 18 mar. 2016
EventoIEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 - S. Lake Tahoe, Estados Unidos
Duración: 11 oct. 201515 oct. 2015

Serie de la publicación

NombreIEEE International Integrated Reliability Workshop Final Report
Volumen2016-March
ISSN (versión impresa)1930-8841
ISSN (versión digital)2374-8036

Conferencia

ConferenciaIEEE International Integrated Reliability Workshop: Final Report, IIRW 2015
País/TerritorioEstados Unidos
CiudadS. Lake Tahoe
Período11/10/1515/10/15

Nota bibliográfica

Publisher Copyright:
© 2015 IEEE.

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