Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young; R. Campbell; S. Daasa; S. Benton; R. Rodriguez Davila; I. Mejia; M. Quevedo-Lopez

doi:10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young, R. Campbell, S. Daasa, S. Benton, R. Rodriguez Davila, I. Mejia, M. Quevedo-Lopez

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

4 Citas (Scopus)

Resumen

We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

Idioma original	Inglés
Título de la publicación alojada	2015 IEEE International Integrated Reliability Workshop
Subtítulo de la publicación alojada	Final Report, IIRW 2015
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	34-36
Número de páginas	3
ISBN (versión digital)	9781467373968
DOI	https://doi.org/10.1109/IIRW.2015.7437062
Estado	Publicada - 18 mar. 2016
Evento	IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 - S. Lake Tahoe, Estados Unidos Duración: 11 oct. 2015 → 15 oct. 2015

Serie de la publicación

Nombre	IEEE International Integrated Reliability Workshop Final Report
Volumen	2016-March
ISSN (versión impresa)	1930-8841
ISSN (versión digital)	2374-8036

Conferencia

Conferencia	IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015
País/Territorio	Estados Unidos
Ciudad	S. Lake Tahoe
Período	11/10/15 → 15/10/15

Nota bibliográfica

Publisher Copyright:
© 2015 IEEE.

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10.1109/IIRW.2015.7437062

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Young, C. D., Campbell, R., Daasa, S., Benton, S., Davila, R. R., Mejia, I., & Quevedo-Lopez, M. (2016). Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. En 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 (pp. 34-36). Artículo 7437062 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2016-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2015.7437062

Young, C. D. ; Campbell, R. ; Daasa, S. et al. / Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 34-36 (IEEE International Integrated Reliability Workshop Final Report).

@inproceedings{7001bf7b839848baa7459322f38e2162,

title = "Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs",

abstract = "We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.",

keywords = "Al2O3, HfO2, TFT, ZnO, threshold voltage instability",

author = "Young, {C. D.} and R. Campbell and S. Daasa and S. Benton and Davila, {R. Rodriguez} and I. Mejia and M. Quevedo-Lopez",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2016",

month = mar,

day = "18",

doi = "10.1109/IIRW.2015.7437062",

language = "Ingl{\'e}s",

series = "IEEE International Integrated Reliability Workshop Final Report",

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Young, CD, Campbell, R, Daasa, S, Benton, S, Davila, RR, Mejia, I & Quevedo-Lopez, M 2016, Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. En 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015., 7437062, IEEE International Integrated Reliability Workshop Final Report, vol. 2016-March, Institute of Electrical and Electronics Engineers Inc., pp. 34-36, IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015, S. Lake Tahoe, Estados Unidos, 11/10/15. https://doi.org/10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. / Young, C. D.; Campbell, R.; Daasa, S. et al.
2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 34-36 7437062 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2016-March).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

AU - Young, C. D.

AU - Campbell, R.

AU - Daasa, S.

AU - Benton, S.

AU - Davila, R. Rodriguez

AU - Mejia, I.

AU - Quevedo-Lopez, M.

PY - 2016/3/18

Y1 - 2016/3/18

N2 - We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

AB - We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

KW - Al2O3

KW - HfO2

KW - TFT

KW - ZnO

KW - threshold voltage instability

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DO - 10.1109/IIRW.2015.7437062

M3 - Contribución a la conferencia

AN - SCOPUS:84964655388

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 34

EP - 36

BT - 2015 IEEE International Integrated Reliability Workshop

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015

Y2 - 11 October 2015 through 15 October 2015

ER -

Young CD, Campbell R, Daasa S, Benton S, Davila RR, Mejia I et al. Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. En 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 34-36. 7437062. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

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