Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs

M. Shahriar Rahman, Tanvir Morshed, S. P. Devireddy, M. A. Quevedo-Lopez, Ajit Shanware, Luigi Colombo, Zeynep Çelik-Butler

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

Low frequency noise (LFN) characteristics of HfSiO and HfSiON nMOS with TiN metal gate were compared. Two different methods to introduce nitrogen in HfSiO, plasma and thermal nitridation, were discussed from LFN point of view. Using Multi-stack Unified Noise (MSUN) model, number and mobility fluctuation components were separated to find out the effects of processing on LFN characteristics. Different processing techniques have negligible effects on number fluctuation components. However, mobility fluctuation components were significantly affected. The reason might be due to the presence and distribution of various Coulomb scattering sites at the silicon-high-k interface and in the bulk of high-k oxide due to different nitridation processes.

Idioma originalInglés
Título de la publicación alojadaNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Páginas25-28
Número de páginas4
DOI
EstadoPublicada - 2007
Publicado de forma externa
Evento19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japón
Duración: 9 sep. 200714 sep. 2007

Serie de la publicación

NombreAIP Conference Proceedings
Volumen922
ISSN (versión impresa)0094-243X
ISSN (versión digital)1551-7616

Conferencia

Conferencia19th International Conference on Noise and Fluctuations, ICNF2007
País/TerritorioJapón
CiudadTokyo
Período9/09/0714/09/07

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