Electric field to control light scattering on semiconductor QWW

M. Fernández-Lozada, Ri Betancourt-Riera, Re Betancourt-Riera, L. A. Ferrer-Moreno, R. Riera-Aroche*

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

1 Cita (Scopus)

Resumen

In this work, the study of an external electric field to control the electron Raman scattering in a semiconductor quantum well wire with a cylindrical symmetry grown in a GaAs/Al0.35Ga0.65As matrix is presented. In our model we considered an transversal electric field to the axis of the system. To illustrate our calculations a single electron in the conduction band, that is parabolic and unfolds in a system of sub-bands due to confinement is considered. This approach assumed the results previously obtained by our group where the behavior of the electron states energy, εr, as a function of the electric field and the confinement radius was demonstrated. The unfolding of the electron states, the selection rules elimination, and the positions of the singularities with the change of the electric field for a fixed confinement radius were visible in the emission spectra. Finally, the quantum efficiency and the characteristics of a secondary radiation source based on electron Raman scattering process in a semiconductor quantum well wire with fixed confinement radius, electric field intensity, and incident photon energy to operate properly with the best efficiency, are established.

Idioma originalInglés
Número de artículo166849
PublicaciónOptik
Volumen240
DOI
EstadoPublicada - ago. 2021
Publicado de forma externa

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