TY - JOUR
T1 - Electrical characteristics of lead-free Mn-doped BiFeO3–SrTiO3 thin films deposited on silicon substrate using pulsed laser deposition
AU - Serralta-Macías, J. J.
AU - Rodriguez-Davila, R. A.
AU - Quevedo-Lopez, M.
AU - Olguín, D.
AU - Castillo, S. J.
AU - Young, C. D.
AU - Yáñez-Limón, J. M.
N1 - Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/8
Y1 - 2022/8
N2 - Lead-free 0.4(BiFe0.995Mn0.005O3)–0.6(SrTiO3) thin films were deposited on boron-doped silicon (p-Si) through pulsed laser deposition. The effect of different deposition pressures ranging from 4.66 × 10− 5 to 13.33 Pa was evaluated, with a corresponding deposition temperature of 700 °C. A conventional lithography process was used to define vertical metal–insulator–metal structures, and the electrical characteristics of these structures were evaluated. The results revealed that as the densification is improved, the leakage current is enhanced and the dielectric constant decreased with the decrease in thickness and increase in deposition pressure. The curve of the current density as a function of the applied electric field exhibited a rectifying effect, with a difference of nearly two orders of magnitude in the current with a forward bias compared to that with a reverse bias. The leakage current mechanisms in metal–ferroelectric–semiconductor structures were investigated as well. The main electrode-limited conduction mechanisms were Schottky emission and Fowler–Nordheim tunneling; the bulk-limited mechanisms were ohmic conduction under low applied electric fields and space charge-limited conduction (SCLC) under high electric fields. The SCLC model was used to calculate the total trap-state density (Nt) at room temperature; Nt was higher in the films deposited under higher pressures.
AB - Lead-free 0.4(BiFe0.995Mn0.005O3)–0.6(SrTiO3) thin films were deposited on boron-doped silicon (p-Si) through pulsed laser deposition. The effect of different deposition pressures ranging from 4.66 × 10− 5 to 13.33 Pa was evaluated, with a corresponding deposition temperature of 700 °C. A conventional lithography process was used to define vertical metal–insulator–metal structures, and the electrical characteristics of these structures were evaluated. The results revealed that as the densification is improved, the leakage current is enhanced and the dielectric constant decreased with the decrease in thickness and increase in deposition pressure. The curve of the current density as a function of the applied electric field exhibited a rectifying effect, with a difference of nearly two orders of magnitude in the current with a forward bias compared to that with a reverse bias. The leakage current mechanisms in metal–ferroelectric–semiconductor structures were investigated as well. The main electrode-limited conduction mechanisms were Schottky emission and Fowler–Nordheim tunneling; the bulk-limited mechanisms were ohmic conduction under low applied electric fields and space charge-limited conduction (SCLC) under high electric fields. The SCLC model was used to calculate the total trap-state density (Nt) at room temperature; Nt was higher in the films deposited under higher pressures.
UR - http://www.scopus.com/inward/record.url?scp=85135301076&partnerID=8YFLogxK
U2 - 10.1007/s10854-022-08765-x
DO - 10.1007/s10854-022-08765-x
M3 - Artículo
AN - SCOPUS:85135301076
SN - 0957-4522
VL - 33
SP - 19272
EP - 19283
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 24
ER -