Electrical characterization of process induced effects on non-silicon devices

Chadwin D. Young; Pavel Bolshakov; Rodolfo A. Rodriguez-Davila; Peng Zhao; Ava Khosravi; Israel Mejia; Manuel Quevedo-Lopez; Christopher L. Hinkle; Robert M. Wallace

doi:10.1109/ICICDT.2018.8399784

Electrical characterization of process induced effects on non-silicon devices

Chadwin D. Young, Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L. Hinkle, Robert M. Wallace

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

The influence of the fabrication process on the electrical performance of ZnO and MoS₂ devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO₂ and Al₂O₃ gate dielectrics on ZnO or MoS₂ semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

Idioma original	Inglés
Título de la publicación alojada	ICICDT 2018 - International Conference on IC Design and Technology, Proceedings
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	173-176
Número de páginas	4
ISBN (versión digital)	9781538625491
DOI	https://doi.org/10.1109/ICICDT.2018.8399784
Estado	Publicada - 27 jun. 2018
Evento	2018 International Conference on IC Design and Technology, ICICDT 2018 - Otranto, Italia Duración: 4 jun. 2018 → 6 jun. 2018

Serie de la publicación

Nombre	ICICDT 2018 - International Conference on IC Design and Technology, Proceedings

Conferencia

Conferencia	2018 International Conference on IC Design and Technology, ICICDT 2018
País/Territorio	Italia
Ciudad	Otranto
Período	4/06/18 → 6/06/18

Nota bibliográfica

Publisher Copyright:
© 2018 IEEE.

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10.1109/ICICDT.2018.8399784

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Young, C. D., Bolshakov, P., Rodriguez-Davila, R. A., Zhao, P., Khosravi, A., Mejia, I., Quevedo-Lopez, M., Hinkle, C. L., & Wallace, R. M. (2018). Electrical characterization of process induced effects on non-silicon devices. En ICICDT 2018 - International Conference on IC Design and Technology, Proceedings (pp. 173-176). (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2018.8399784

Young, Chadwin D. ; Bolshakov, Pavel ; Rodriguez-Davila, Rodolfo A. et al. / Electrical characterization of process induced effects on non-silicon devices. ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 173-176 (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings).

@inproceedings{1a1787f67d0e4c60bf65c8ac35a67dd6,

title = "Electrical characterization of process induced effects on non-silicon devices",

abstract = "The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.",

keywords = "MoS, TMD, ZnO, high-k, thin-film transistor, transistor",

author = "Young, {Chadwin D.} and Pavel Bolshakov and Rodriguez-Davila, {Rodolfo A.} and Peng Zhao and Ava Khosravi and Israel Mejia and Manuel Quevedo-Lopez and Hinkle, {Christopher L.} and Wallace, {Robert M.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Conference on IC Design and Technology, ICICDT 2018 ; Conference date: 04-06-2018 Through 06-06-2018",

year = "2018",

month = jun,

day = "27",

doi = "10.1109/ICICDT.2018.8399784",

language = "Ingl{\'e}s",

series = "ICICDT 2018 - International Conference on IC Design and Technology, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "173--176",

booktitle = "ICICDT 2018 - International Conference on IC Design and Technology, Proceedings",

address = "Estados Unidos",

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Young, CD, Bolshakov, P, Rodriguez-Davila, RA, Zhao, P, Khosravi, A, Mejia, I, Quevedo-Lopez, M, Hinkle, CL & Wallace, RM 2018, Electrical characterization of process induced effects on non-silicon devices. En ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. ICICDT 2018 - International Conference on IC Design and Technology, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 173-176, 2018 International Conference on IC Design and Technology, ICICDT 2018, Otranto, Italia, 4/06/18. https://doi.org/10.1109/ICICDT.2018.8399784

Electrical characterization of process induced effects on non-silicon devices. / Young, Chadwin D.; Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A. et al.
ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 173-176 (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Electrical characterization of process induced effects on non-silicon devices

AU - Young, Chadwin D.

AU - Bolshakov, Pavel

AU - Rodriguez-Davila, Rodolfo A.

AU - Zhao, Peng

AU - Khosravi, Ava

AU - Mejia, Israel

AU - Quevedo-Lopez, Manuel

AU - Hinkle, Christopher L.

AU - Wallace, Robert M.

PY - 2018/6/27

Y1 - 2018/6/27

N2 - The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

AB - The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

KW - MoS

KW - TMD

KW - ZnO

KW - high-k

KW - thin-film transistor

KW - transistor

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U2 - 10.1109/ICICDT.2018.8399784

DO - 10.1109/ICICDT.2018.8399784

M3 - Contribución a la conferencia

AN - SCOPUS:85050308145

T3 - ICICDT 2018 - International Conference on IC Design and Technology, Proceedings

SP - 173

EP - 176

BT - ICICDT 2018 - International Conference on IC Design and Technology, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Conference on IC Design and Technology, ICICDT 2018

Y2 - 4 June 2018 through 6 June 2018

ER -

Young CD, Bolshakov P, Rodriguez-Davila RA, Zhao P, Khosravi A, Mejia I et al. Electrical characterization of process induced effects on non-silicon devices. En ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 173-176. (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings). doi: 10.1109/ICICDT.2018.8399784

Electrical characterization of process induced effects on non-silicon devices

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