Electron Raman Scattering in Semiconductor Quantum Wells

R. Riera, F. Comas, C. Trallero Giner, S. T. Pavlov

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

26 Citas (Scopus)

Resumen

Differential‐cross‐section for a type of electronic Raman‐scattering process in a semiconductor quantum‐well heterostructure is calculated considering inter‐valley transitions between the system of sub‐bands provided by electron confinement. The intermediate states consist of virtual electron–hole pairs belonging to sub‐bands from the conduction and valence bands respectively. The T = 0 K case is assumed and transitions with the participation of phonons are not included in the analysis. The quantum‐well is modeled with infinite potential barriers at the interfaces and the effective‐mass‐approximation is utilized. The dependence of the cross‐section with respect to the incident and emitted photon frequencies is analyzed for arbitrary polarization of the secondary radiation field. Singularities in the emission spectra as well as the step‐like character of the emission and excitation spectra are predicted. Numerical results and estimations of the process quantum‐efficiency for the case of a GaAs/AlxGa1−xAs heterostructure are reported. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA
Idioma originalInglés estadounidense
Páginas (desde-hasta)533-542
Número de páginas10
Publicaciónphysica status solidi (b)
DOI
EstadoPublicada - 1 ene 1988
Publicado de forma externa

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