TY - JOUR

T1 - Electron with a position-dependent effective mass inside a semiconductor medium of variable concentration

AU - Molinar-Tabares, Martín

AU - Figueroa-Navarro, Carlos

AU - Castro-Arce, Lamberto

AU - Campos-García, Julio

N1 - Publisher Copyright:
© 2015 American Scientific Publishers.

PY - 2015/11

Y1 - 2015/11

N2 - In this paper we manage the concept of position-dependent effective mass, for an electron confined in a semiconductor, which was deposited two-dimensionally with a variable concentration on a substrate. We assume that the semiconductor structure has a circular form with ρ0 radius and that the concentration varies linearly, quadratically, and harmonically with the radial coordinate ρ. The electron has potential energy due to the semiconductor. In our work, we introduced a relation for the concentration, the potential energy of the electron, and the position-dependent effective mass, which are related to the geometry followed to deposit the semiconductor. In order to illustrate the management of the position-dependent effective mass, we chose as semiconductor AlxGa1-x As and numerically solved Schrödinger equation independently of the time in polar coordinates (ρ, θ, where we considered the dependency of the mass with respect to position to get the ground-state energy and the energy of some excited energy states for the three forms in which concentration varies. Estimations reveal the differences when we consider an average mass (a constant mass) or when we take into account the position-dependent mass, observing that from certain values of the ρ0 radius of the structure, the energies that are found when considering the dependent mass are higher than the ones that are obtained with an average mass. Based on results from our study, we can conclude that we can model any type of potential, working with a specific geometry when depositing the semiconductor.

AB - In this paper we manage the concept of position-dependent effective mass, for an electron confined in a semiconductor, which was deposited two-dimensionally with a variable concentration on a substrate. We assume that the semiconductor structure has a circular form with ρ0 radius and that the concentration varies linearly, quadratically, and harmonically with the radial coordinate ρ. The electron has potential energy due to the semiconductor. In our work, we introduced a relation for the concentration, the potential energy of the electron, and the position-dependent effective mass, which are related to the geometry followed to deposit the semiconductor. In order to illustrate the management of the position-dependent effective mass, we chose as semiconductor AlxGa1-x As and numerically solved Schrödinger equation independently of the time in polar coordinates (ρ, θ, where we considered the dependency of the mass with respect to position to get the ground-state energy and the energy of some excited energy states for the three forms in which concentration varies. Estimations reveal the differences when we consider an average mass (a constant mass) or when we take into account the position-dependent mass, observing that from certain values of the ρ0 radius of the structure, the energies that are found when considering the dependent mass are higher than the ones that are obtained with an average mass. Based on results from our study, we can conclude that we can model any type of potential, working with a specific geometry when depositing the semiconductor.

KW - Geometry

KW - Position-dependent effective mass

KW - Potential energy

KW - Variable concentration

UR - http://www.scopus.com/inward/record.url?scp=84964940033&partnerID=8YFLogxK

U2 - 10.1166/jctn.2015.4438

DO - 10.1166/jctn.2015.4438

M3 - Artículo

SN - 1546-1955

VL - 12

SP - 4767

EP - 4777

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

IS - 11

ER -