Electronic properties of Co and Ni silicides: A theoretical approach using extended Huckel method

D. H. Galvan*, A. P.Posada Amarillas, J. C.Samaniego Reyna, M. García-Méndez, M. H. Farías

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

4 Citas (Scopus)

Resumen

Calculations of electronic structure, total and projected density of states (DOS), crystal orbital overlap population (COOP), and average net charge, and also Mulliken population analysis, were performed to study electronic properties of Co and Ni silicides. Analysis of the energy bands depicts metallic behavior for both silicides. The projected DOS yields an indication that hybridization occurs for Co and Ni silicides. The hybridized band in CoSi2 is composed of Co d and p orbitals and Si p and s orbitals, while in NiSi 2 the hybridized band is formed by Ni d and p orbitals with Si p orbitals. The fact that the Fermi energy crosses a small part of the DOS, as is the case of CoSi2, yields an indication of the different electronic properties of CoSi2 when compared to NiSi2. The hybridization is stronger in CoSi2 than in NiSi2. Mulliken population analysis provides an indication that a smaller charge distribution exists in NiSi2 when compared to CoSi2. This difference in charge distribution accounts for the different electronic behavior, in agreement with the DOS analysis. Moreover, COOP analysis provides an indication of the existence of covalent bonding between M and Si (M = Ni, Co), this being stronger in Co than in Ni silicides. Furthermore, the average net charge in both compounds yields an indication that there is a charge transfer from M towards Si.

Idioma originalInglés
Páginas (desde-hasta)2905-2913
Número de páginas9
PublicaciónPhysica Status Solidi (B) Basic Research
Volumen241
N.º13
DOI
EstadoPublicada - nov. 2004

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