Energy storage performance in lead-free antiferroelectric 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3ultrathin films by pulsed laser deposition

José De Jesús Serralta-Macías, Rodolfo Antonio Rodriguez-Davila, Manuel Quevedo-Lopez, Daniel Olguín, Santos Jesús Castillo, Chadwin D. Young, José Martin Yáñez-Limón*

*Autor correspondiente de este trabajo

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

Resumen

In this study, we report the recoverable energy density (Urec) of lead-free antiferroelectric perovskite 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3 (BNT-BT) ultrathin films deposited directly on highly boron-doped silicon (p-Si) by a pulsed laser deposition method. Two pressure values were used in the growing conditions, 4.67 × 10-5 and 13.3 Pa, at a fixed substrate temperature of 700 °C. After that, the films were subjected to postannealing under an oxidizing atmosphere at 700 °C for 1 h. A conventional lithography process was used to define vertical metal-ferroelectric-p-Si structures and evaluate the energy storage characteristics. Cross-sectional SEM images showed achieved thicknesses of about 11-13 nm. The high electric field strengths of 3.8 and 4.5 MV/cm supported for BNT-BT ultrathin films deposited at 4.67 × 10-5 and 13.3 Pa, respectively, imply a high-quality perovskite thin-film growth on p-Si. The 11-nm ultrathin film grown at 13.3 Pa showed higher Urec, efficiency (η), and a maximum applied electric field of 30 J/cm3, 83%, and 4.5 MV/cm, respectively.

Idioma originalInglés
Número de artículo033417
PublicaciónJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volumen40
N.º3
DOI
EstadoPublicada - 1 may 2022

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