Energy storage performance in lead-free antiferroelectric 0.92(Bi_0.54Na_0.46)TiO₃-0.08BaTiO₃ultrathin films by pulsed laser deposition

In this study, we report the recoverable energy density (Urec) of lead-free antiferroelectric perovskite 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3 (BNT-BT) ultrathin films deposited directly on highly boron-doped silicon (p-Si) by a pulsed laser deposition method. Two pressure values were used in the growing conditions, 4.67 × 10-5 and 13.3 Pa, at a fixed substrate temperature of 700 °C. After that, the films were subjected to postannealing under an oxidizing atmosphere at 700 °C for 1 h. A conventional lithography process was used to define vertical metal-ferroelectric-p-Si structures and evaluate the energy storage characteristics. Cross-sectional SEM images showed achieved thicknesses of about 11-13 nm. The high electric field strengths of 3.8 and 4.5 MV/cm supported for BNT-BT ultrathin films deposited at 4.67 × 10-5 and 13.3 Pa, respectively, imply a high-quality perovskite thin-film growth on p-Si. The 11-nm ultrathin film grown at 13.3 Pa showed higher Urec, efficiency (η), and a maximum applied electric field of 30 J/cm3, 83%, and 4.5 MV/cm, respectively.