Enhanced optical and electrical properties of Co-doped SnS thin films synthesized via chemical bath deposition

R. Grijalva-Saavedra, G. Suárez-Campos, J. Fuentes-Ríos, M. Ruiz-Molina, J. Solís-Mosquera, M. A. Quevedo-Lopez, D. Cabrera-German, M. Sotelo-Lerma*

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

Resumen

Herein, a simple and cost-effective chemical bath deposition methodology was employed to synthesize Co-doped SnS thin films, focusing on the improvement of the optical and electrical properties of the films by modulating the Co2+ ion concentrations in the reaction solution. X-ray diffraction analysis revealed a phase transformation from amorphous to a Herzenbergite orthorhombic phase with increasing Co2+ concentration. Chemical structure analysis via X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy confirmed the incorporation of Co2+ ions, along with the presence of SnS, Sn2S3, and minor CoO phases. Optical studies demonstrated a significant bandgap widening from ~ 1.0 eV (undoped) to ~ 1.7 eV (Co-doped), making the films suitable for photovoltaic applications. Electrical characterization showed a marked decrease in resistivity from ~ 3 × 109 to 22 × 106 Ω cm. These results highlight the potential of Co-doped SnS thin films for next-generation photovoltaic devices, emphasizing the importance of doping optimization to balance performance and structural integrity.

Idioma originalInglés
Número de artículo72
PublicaciónJournal of Materials Science: Materials in Electronics
Volumen36
N.º1
DOI
EstadoPublicada - ene. 2025

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© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.

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