TY - JOUR
T1 - Enhanced optical and electrical properties of Co-doped SnS thin films synthesized via chemical bath deposition
AU - Grijalva-Saavedra, R.
AU - Suárez-Campos, G.
AU - Fuentes-Ríos, J.
AU - Ruiz-Molina, M.
AU - Solís-Mosquera, J.
AU - Quevedo-Lopez, M. A.
AU - Cabrera-German, D.
AU - Sotelo-Lerma, M.
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.
PY - 2025/1
Y1 - 2025/1
N2 - Herein, a simple and cost-effective chemical bath deposition methodology was employed to synthesize Co-doped SnS thin films, focusing on the improvement of the optical and electrical properties of the films by modulating the Co2+ ion concentrations in the reaction solution. X-ray diffraction analysis revealed a phase transformation from amorphous to a Herzenbergite orthorhombic phase with increasing Co2+ concentration. Chemical structure analysis via X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy confirmed the incorporation of Co2+ ions, along with the presence of SnS, Sn2S3, and minor CoO phases. Optical studies demonstrated a significant bandgap widening from ~ 1.0 eV (undoped) to ~ 1.7 eV (Co-doped), making the films suitable for photovoltaic applications. Electrical characterization showed a marked decrease in resistivity from ~ 3 × 109 to 22 × 106 Ω cm. These results highlight the potential of Co-doped SnS thin films for next-generation photovoltaic devices, emphasizing the importance of doping optimization to balance performance and structural integrity.
AB - Herein, a simple and cost-effective chemical bath deposition methodology was employed to synthesize Co-doped SnS thin films, focusing on the improvement of the optical and electrical properties of the films by modulating the Co2+ ion concentrations in the reaction solution. X-ray diffraction analysis revealed a phase transformation from amorphous to a Herzenbergite orthorhombic phase with increasing Co2+ concentration. Chemical structure analysis via X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy confirmed the incorporation of Co2+ ions, along with the presence of SnS, Sn2S3, and minor CoO phases. Optical studies demonstrated a significant bandgap widening from ~ 1.0 eV (undoped) to ~ 1.7 eV (Co-doped), making the films suitable for photovoltaic applications. Electrical characterization showed a marked decrease in resistivity from ~ 3 × 109 to 22 × 106 Ω cm. These results highlight the potential of Co-doped SnS thin films for next-generation photovoltaic devices, emphasizing the importance of doping optimization to balance performance and structural integrity.
UR - http://www.scopus.com/inward/record.url?scp=85213704762&partnerID=8YFLogxK
U2 - 10.1007/s10854-024-14126-7
DO - 10.1007/s10854-024-14126-7
M3 - Artículo
AN - SCOPUS:85213704762
SN - 0957-4522
VL - 36
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 1
M1 - 72
ER -