Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3

R. A. Rodriguez-Davila, R. A. Chapman, M. Catalano, M. Quevedo-Lopez, C. D. Young*

*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

The prolonged bias stress of ZnO TFTs transistors with Al2O3 deposited at 100, 175, and 250°C is presented. Fully patterned bottom gated and top contacted devices serve as the test structures. The reliability study shows increasing threshold voltage shifting of 10.5, 18.6, and 27.2 % with deposition temperature with no significant change in the density of interface states for all the samples. Nevertheless, there is a dependence of the oxide trap states with stress time. The analysis of the transconductance as a function of the threshold voltage shifting indicates that oxide traps states near the interface are the dominant instability mechanism for significant stress times. The Al2O3 deposited at a temperature of 100 °C contains a higher concentration of oxygen compared to the other samples. This present oxygen excess could be filling oxygen vacancies present in the Al2O3, thereby resulting in a smaller ΔVTH.

Idioma originalInglés
Título de la publicación alojada2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781728131993
DOI
EstadoPublicada - abr. 2020
Publicado de forma externa
Evento2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, Estados Unidos
Duración: 28 abr. 202030 may. 2020

Serie de la publicación

NombreIEEE International Reliability Physics Symposium Proceedings
Volumen2020-April
ISSN (versión impresa)1541-7026

Conferencia

Conferencia2020 IEEE International Reliability Physics Symposium, IRPS 2020
País/TerritorioEstados Unidos
CiudadVirtual, Online
Período28/04/2030/05/20

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Publisher Copyright:
© 2020 IEEE.

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