Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

L. Miotti; K. P. Bastos; G. V. Soares; C. Driemeier; R. P. Pezzi; J. Morais; I. J.R. Baumvol; A. L.P. Rotondaro; M. R. Visokay; J. J. Chambers; M. Quevedo-Lopez; L. Colombo

doi:10.1063/1.1812814

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

L. Miotti, K. P. Bastos, G. V. Soares, C. Driemeier, R. P. Pezzi, J. Morais, I. J.R. Baumvol, A. L.P. Rotondaro^*, M. R. Visokay, J. J. Chambers, M. Quevedo-Lopez, L. Colombo

^*Autor correspondiente de este trabajo

Departamento de Investigación en Polímeros y Materiales

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14 Citas (Scopus)

Resumen

HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N ₂ and O ₂ atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O ₂, ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.

Idioma original	Inglés
Páginas (desde-hasta)	4460-4462
Número de páginas	3
Publicación	Applied Physics Letters
Volumen	85
N.º	19
DOI	https://doi.org/10.1063/1.1812814
Estado	Publicada - 8 nov. 2004

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Miotti, L., Bastos, K. P., Soares, G. V., Driemeier, C., Pezzi, R. P., Morais, J., Baumvol, I. J. R., Rotondaro, A. L. P., Visokay, M. R., Chambers, J. J., Quevedo-Lopez, M., & Colombo, L. (2004). Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Applied Physics Letters, 85(19), 4460-4462. https://doi.org/10.1063/1.1812814

@article{5bdad50ad93d48d2b0c22775eb4cc679,

title = "Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling",

abstract = "HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N 2 and O 2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O 2, ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.",

author = "L. Miotti and Bastos, {K. P.} and Soares, {G. V.} and C. Driemeier and Pezzi, {R. P.} and J. Morais and Baumvol, {I. J.R.} and Rotondaro, {A. L.P.} and Visokay, {M. R.} and Chambers, {J. J.} and M. Quevedo-Lopez and L. Colombo",

year = "2004",

month = nov,

day = "8",

doi = "10.1063/1.1812814",

language = "Ingl{\'e}s",

volume = "85",

pages = "4460--4462",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

Miotti, L, Bastos, KP, Soares, GV, Driemeier, C, Pezzi, RP, Morais, J, Baumvol, IJR, Rotondaro, ALP, Visokay, MR, Chambers, JJ, Quevedo-Lopez, M & Colombo, L 2004, 'Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling', Applied Physics Letters, vol. 85, n.º 19, pp. 4460-4462. https://doi.org/10.1063/1.1812814

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. / Miotti, L.; Bastos, K. P.; Soares, G. V. et al.
En: Applied Physics Letters, Vol. 85, N.º 19, 08.11.2004, p. 4460-4462.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

AU - Miotti, L.

AU - Bastos, K. P.

AU - Soares, G. V.

AU - Driemeier, C.

AU - Pezzi, R. P.

AU - Morais, J.

AU - Baumvol, I. J.R.

AU - Rotondaro, A. L.P.

AU - Visokay, M. R.

AU - Chambers, J. J.

AU - Quevedo-Lopez, M.

AU - Colombo, L.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N 2 and O 2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O 2, ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.

AB - HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N 2 and O 2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O 2, ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.

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U2 - 10.1063/1.1812814

DO - 10.1063/1.1812814

M3 - Artículo

AN - SCOPUS:10844237994

SN - 0003-6951

VL - 85

SP - 4460

EP - 4462

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

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