Experimental and theoretical DOS of Co and Ni silicides

M. García-Méndez; M. H. Farías; D. H. Galván-Martínez; A. Posada-Amarillas; G. Beamson

doi:10.1016/S0039-6028(03)00133-X

Experimental and theoretical DOS of Co and Ni silicides

M. García-Méndez, M. H. Farías^*, D. H. Galván-Martínez, A. Posada-Amarillas, G. Beamson

^*Autor correspondiente de este trabajo

Departamento de Investigación en Física

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

6 Citas (Scopus)

Resumen

A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended Hückel theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work.

Idioma original	Inglés
Páginas (desde-hasta)	952-956
Número de páginas	5
Publicación	Surface Science
Volumen	532-535
DOI	https://doi.org/10.1016/S0039-6028(03)00133-X
Estado	Publicada - 10 jun. 2003
Evento	Proceedings of the 7th International Conference on Nanometer - Malmo, Suecia Duración: 29 ago. 2002 → 31 ago. 2002

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10.1016/S0039-6028(03)00133-X

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title = "Experimental and theoretical DOS of Co and Ni silicides",

abstract = "A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended H{\"u}ckel theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work.",

keywords = "Electron density, excitation spectra calculations, Silicides, X-ray photoelectron spectroscopy",

author = "M. Garc{\'i}a-M{\'e}ndez and Far{\'i}as, {M. H.} and Galv{\'a}n-Mart{\'i}nez, {D. H.} and A. Posada-Amarillas and G. Beamson",

note = "Funding Information: We would like to thank A. Tiznado and C. Gonz{\'a}lez for valuable technical assistance. This work was partially supported by CONACYT-M{\'e}xico (project number 139274-E), PAICYT-UANL-M{\'e}xico (project number CA750-02) and by DGAPA-UNAM.; Proceedings of the 7th International Conference on Nanometer ; Conference date: 29-08-2002 Through 31-08-2002",

year = "2003",

month = jun,

day = "10",

doi = "10.1016/S0039-6028(03)00133-X",

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T1 - Experimental and theoretical DOS of Co and Ni silicides

AU - García-Méndez, M.

AU - Farías, M. H.

AU - Galván-Martínez, D. H.

AU - Posada-Amarillas, A.

AU - Beamson, G.

N1 - Funding Information: We would like to thank A. Tiznado and C. González for valuable technical assistance. This work was partially supported by CONACYT-México (project number 139274-E), PAICYT-UANL-México (project number CA750-02) and by DGAPA-UNAM.

PY - 2003/6/10

Y1 - 2003/6/10

N2 - A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended Hückel theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work.

AB - A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended Hückel theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work.

KW - Electron density, excitation spectra calculations

KW - Silicides

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0038182999&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(03)00133-X

DO - 10.1016/S0039-6028(03)00133-X

M3 - Artículo de la conferencia

AN - SCOPUS:0038182999

SN - 0039-6028

VL - 532-535

SP - 952

EP - 956

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 7th International Conference on Nanometer

Y2 - 29 August 2002 through 31 August 2002

ER -

Experimental and theoretical DOS of Co and Ni silicides

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