Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

Yang Xi; Martha Isabel Serna; Lanxia Cheng; Yang Gao; Mahmoud Baniasadi; Rodolfo Rodriguez-Davila; Jiyoung Kim; Manuel A. Quevedo-Lopez; Majid Minary-Jolandan

doi:10.1039/c5tc00062a

Fabrication of MoS₂ thin film transistors via selective-area solution deposition methods

Yang Xi, Martha Isabel Serna, Lanxia Cheng, Yang Gao, Mahmoud Baniasadi, Rodolfo Rodriguez-Davila, Jiyoung Kim, Manuel A. Quevedo-Lopez, Majid Minary-Jolandan^*

^*Autor correspondiente de este trabajo

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

43 Citas (Scopus)

Resumen

We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS₂) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS₂ grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS₂ thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS₂ on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm² V^-1 s^-1.

Idioma original	Inglés
Páginas (desde-hasta)	3842-3847
Número de páginas	6
Publicación	Journal of Materials Chemistry C
Volumen	3
N.º	16
DOI	https://doi.org/10.1039/c5tc00062a
Estado	Publicada - 28 abr. 2015
Publicado de forma externa	Sí

Nota bibliográfica

Publisher Copyright:
© The Royal Society of Chemistry 2015.

Acceder al documento

10.1039/c5tc00062a

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{213025ad313a467d96e82b475f6654ea,

title = "Fabrication of MoS2 thin film transistors via selective-area solution deposition methods",

abstract = "We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V-1 s-1.",

author = "Yang Xi and Serna, {Martha Isabel} and Lanxia Cheng and Yang Gao and Mahmoud Baniasadi and Rodolfo Rodriguez-Davila and Jiyoung Kim and Quevedo-Lopez, {Manuel A.} and Majid Minary-Jolandan",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2015.",

year = "2015",

month = apr,

day = "28",

doi = "10.1039/c5tc00062a",

language = "Ingl{\'e}s",

volume = "3",

pages = "3842--3847",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "16",

}

TY - JOUR

T1 - Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

AU - Xi, Yang

AU - Serna, Martha Isabel

AU - Cheng, Lanxia

AU - Gao, Yang

AU - Baniasadi, Mahmoud

AU - Rodriguez-Davila, Rodolfo

AU - Kim, Jiyoung

AU - Quevedo-Lopez, Manuel A.

AU - Minary-Jolandan, Majid

PY - 2015/4/28

Y1 - 2015/4/28

N2 - We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V-1 s-1.

AB - We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V-1 s-1.

UR - http://www.scopus.com/inward/record.url?scp=84927779540&partnerID=8YFLogxK

U2 - 10.1039/c5tc00062a

DO - 10.1039/c5tc00062a

M3 - Artículo

SN - 2050-7534

VL - 3

SP - 3842

EP - 3847

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 16

ER -