Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

E. M.A. Fuentes-Fernandez; A. M. Salomon-Preciado; B. E. Gnade; M. A. Quevedo-Lopez; P. Shah; H. N. Alshareef

doi:10.1007/s11664-014-3308-x

Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

E. M.A. Fuentes-Fernandez, A. M. Salomon-Preciado, B. E. Gnade, M. A. Quevedo-Lopez, P. Shah, H. N. Alshareef^*

^*Autor correspondiente de este trabajo

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

10 Citas (Scopus)

Resumen

The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr_0.53,Ti_0.47)O₃-Pb(Zn_1/3,Nb_2/3)O₃ (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm².

Idioma original	Inglés
Páginas (desde-hasta)	3898-3904
Número de páginas	7
Publicación	Journal of Electronic Materials
Volumen	43
N.º	11
DOI	https://doi.org/10.1007/s11664-014-3308-x
Estado	Publicada - 1 nov. 2014
Publicado de forma externa	Sí

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© 2014 The Minerals, Metals & Materials Society.

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title = "Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer",

abstract = "The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.",

keywords = "Energy harvesting, cantilever, integration, perovskite, piezoelectric, relaxor",

author = "Fuentes-Fernandez, {E. M.A.} and Salomon-Preciado, {A. M.} and Gnade, {B. E.} and Quevedo-Lopez, {M. A.} and P. Shah and Alshareef, {H. N.}",

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doi = "10.1007/s11664-014-3308-x",

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T1 - Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

AU - Fuentes-Fernandez, E. M.A.

AU - Salomon-Preciado, A. M.

AU - Gnade, B. E.

AU - Quevedo-Lopez, M. A.

AU - Shah, P.

AU - Alshareef, H. N.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

AB - The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

KW - Energy harvesting

KW - cantilever

KW - integration

KW - perovskite

KW - piezoelectric

KW - relaxor

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U2 - 10.1007/s11664-014-3308-x

DO - 10.1007/s11664-014-3308-x

M3 - Artículo

SN - 0361-5235

VL - 43

SP - 3898

EP - 3904

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

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