Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

E. M.A. Fuentes-Fernandez, A. M. Salomon-Preciado, B. E. Gnade, M. A. Quevedo-Lopez, P. Shah, H. N. Alshareef*

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

8 Citas (Scopus)

Resumen

The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

Idioma originalInglés
Páginas (desde-hasta)3898-3904
Número de páginas7
PublicaciónJournal of Electronic Materials
Volumen43
N.º11
DOI
EstadoPublicada - 1 nov. 2014
Publicado de forma externa

Nota bibliográfica

Publisher Copyright:
© 2014 The Minerals, Metals & Materials Society.

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