Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

Victor Champac*, Hector Villacorta*, R. Gomez-Fuentes, Fabian Vargas, Jaume Segura

*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.

Idioma originalInglés
Título de la publicación alojada2022 IEEE 23rd Latin American Test Symposium, LATS 2022
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781665457071
DOI
EstadoPublicada - 2022
Evento23rd IEEE Latin American Test Symposium, LATS 2022 - Montevideo, Uruguay
Duración: 5 sep. 20228 sep. 2022

Serie de la publicación

Nombre2022 IEEE 23rd Latin American Test Symposium, LATS 2022

Conferencia

Conferencia23rd IEEE Latin American Test Symposium, LATS 2022
País/TerritorioUruguay
CiudadMontevideo
Período5/09/228/09/22

Nota bibliográfica

Publisher Copyright:
© 2022 IEEE.

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