Full bridge circuit based on pentacene schottky diodes fabricated on plastic substrates

G. Gutierrez-Heredia, V. H. Martinez-Landeros, F. S. Aguirre-Tostado, P. Shah, B. E. Gnade, M. Sotelo-Lerma, M. A. Quevedo-Lopez*

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

6 Citas (Scopus)


In this work, we demonstrate a full bridge diode (FBD) circuit compatible and fabricated on flexible polyethylene naphthalene (PEN) substrate. The fabrication was carried out using photolithography-based processes and pentacene Schottky diodes as the active circuit components. The individual pentacene diodes show the on/off current ratio of 10 5, with reverse and forward bias current densities of 10 4and 10 2A cm 2, respectively. Diodes and the full bridge configuration were measured in the range of10 to+10V. Discrete diodes fabricated in the same substrate show similar behavior to those integrated in the FBD circuit. The frequency response was evaluated using an ac signal and voltage ranging from 1 to 5MHz and10 to+10V, respectively. The dc output voltage under these conditions was 7-8.5V for individual diodes and 3-5.5V for the FBD circuit. The resulting FBD circuits show full wave rectification for ac signals up to ±10V in the frequency regime tested. The circuit demonstrated could be used for ac-related energy harvesting requiring rectification. One of such energy harvesting approaches could be power generated from micro-cantilevers.

Idioma originalInglés
Número de artículo085013
PublicaciónSemiconductor Science and Technology
EstadoPublicada - ago. 2012


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