High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

P. D. Kirsch; J. Peterson; J. Gutt; S. Gopalan; S. Krishnan; H. J. Li; M. Quevedo-Lopez; M. Akbar; J. Barnett; N. Moumen; J. H. Sim; S. C. Song; P. Lysaght; C. Huffman; P. Majhi; M. Gardner; G. Brown; G. Bersuker; B. H. Lee

High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

P. D. Kirsch^*, J. Peterson, J. Gutt, S. Gopalan, S. Krishnan, H. J. Li, M. Quevedo-Lopez, M. Akbar, J. Barnett, N. Moumen, J. H. Sim, S. C. Song, P. Lysaght, C. Huffman, P. Majhi, M. Gardner, G. Brown, G. Bersuker, B. H. Lee

^*Autor correspondiente de este trabajo

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

We report process development work targeting mobility enhancement in n-type metal oxide semiconductor field effect transistors (NMOSFET) utilizing high-& dielectrics and TiN gate electrodes. We have investigated the following gate stack issues: surface preparation, dielectric thickness, dielectric composition, post deposition annealing and TiN deposition process. Our mobility results lead to the following conclusions: 1) mobility is enhanced with ozone chemical oxide interfaces relative to NH₃ nitrided interfaces, 2) mobility is enhanced with scaled HfO₂ thickness 3) mobility is enhanced at low SiO₂ composition HfSiO (33% SiO ₂), but progress slows at high SiO₂ compositions (55% SiO₂), 4) mobility and Idsat are enhanced with N₂ post deposition anneal (PDA) vs. NH₃ PDA and 5) mobility may be enhanced with ALD TiN gate electrode relative to CVD TiN. In some cases, mobility enhancement is concurrent with gate leakage current or equivalent oxide thickness trade-offs.

Idioma original	Inglés
Título de la publicación alojada	Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005
Páginas	84-93
Número de páginas	10
Estado	Publicada - 2005
Evento	4th International Conference on Semiconductor Technology, ISTC 2005 - Shanghai, China Duración: 15 mar. 2005 → 17 mar. 2005

Serie de la publicación

Nombre	Proceedings - Electrochemical Society
Volumen	PV 2005-12

Conferencia

Conferencia	4th International Conference on Semiconductor Technology, ISTC 2005
País/Territorio	China
Ciudad	Shanghai
Período	15/03/05 → 17/03/05

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Kirsch, P. D., Peterson, J., Gutt, J., Gopalan, S., Krishnan, S., Li, H. J., Quevedo-Lopez, M., Akbar, M., Barnett, J., Moumen, N., Sim, J. H., Song, S. C., Lysaght, P., Huffman, C., Majhi, P., Gardner, M., Brown, G., Bersuker, G., & Lee, B. H. (2005). High-k dielectric process development for enhanced electron mobility in high performance field effect transistors. En Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005 (pp. 84-93). (Proceedings - Electrochemical Society; Vol. PV 2005-12).

@inproceedings{eec3b8855b0549288062df318df06c96,

title = "High-k dielectric process development for enhanced electron mobility in high performance field effect transistors",

abstract = "We report process development work targeting mobility enhancement in n-type metal oxide semiconductor field effect transistors (NMOSFET) utilizing high-& dielectrics and TiN gate electrodes. We have investigated the following gate stack issues: surface preparation, dielectric thickness, dielectric composition, post deposition annealing and TiN deposition process. Our mobility results lead to the following conclusions: 1) mobility is enhanced with ozone chemical oxide interfaces relative to NH3 nitrided interfaces, 2) mobility is enhanced with scaled HfO2 thickness 3) mobility is enhanced at low SiO2 composition HfSiO (33% SiO 2), but progress slows at high SiO2 compositions (55% SiO2), 4) mobility and Idsat are enhanced with N2 post deposition anneal (PDA) vs. NH3 PDA and 5) mobility may be enhanced with ALD TiN gate electrode relative to CVD TiN. In some cases, mobility enhancement is concurrent with gate leakage current or equivalent oxide thickness trade-offs.",

keywords = "Atomic layer deposition, EELS, Electron energy loss spectroscopy, HfO, HfSiO, High field mobility, High-k dielectric, MOSFET, Metal gate electrode, Peak mobility, Post deposition anneal, Surface preparation, TiN",

author = "Kirsch, {P. D.} and J. Peterson and J. Gutt and S. Gopalan and S. Krishnan and Li, {H. J.} and M. Quevedo-Lopez and M. Akbar and J. Barnett and N. Moumen and Sim, {J. H.} and Song, {S. C.} and P. Lysaght and C. Huffman and P. Majhi and M. Gardner and G. Brown and G. Bersuker and Lee, {B. H.}",

year = "2005",

language = "Ingl{\'e}s",

isbn = "1566774683",

series = "Proceedings - Electrochemical Society",

pages = "84--93",

booktitle = "Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005",

note = "4th International Conference on Semiconductor Technology, ISTC 2005 ; Conference date: 15-03-2005 Through 17-03-2005",

}

Kirsch, PD, Peterson, J, Gutt, J, Gopalan, S, Krishnan, S, Li, HJ, Quevedo-Lopez, M, Akbar, M, Barnett, J, Moumen, N, Sim, JH, Song, SC, Lysaght, P, Huffman, C, Majhi, P, Gardner, M, Brown, G, Bersuker, G & Lee, BH 2005, High-k dielectric process development for enhanced electron mobility in high performance field effect transistors. En Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005. Proceedings - Electrochemical Society, vol. PV 2005-12, pp. 84-93, 4th International Conference on Semiconductor Technology, ISTC 2005, Shanghai, China, 15/03/05.

High-k dielectric process development for enhanced electron mobility in high performance field effect transistors. / Kirsch, P. D.; Peterson, J.; Gutt, J. et al.
Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005. 2005. p. 84-93 (Proceedings - Electrochemical Society; Vol. PV 2005-12).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

AU - Kirsch, P. D.

AU - Peterson, J.

AU - Gutt, J.

AU - Gopalan, S.

AU - Krishnan, S.

AU - Li, H. J.

AU - Quevedo-Lopez, M.

AU - Akbar, M.

AU - Barnett, J.

AU - Moumen, N.

AU - Sim, J. H.

AU - Song, S. C.

AU - Lysaght, P.

AU - Huffman, C.

AU - Majhi, P.

AU - Gardner, M.

AU - Brown, G.

AU - Bersuker, G.

AU - Lee, B. H.

PY - 2005

Y1 - 2005

N2 - We report process development work targeting mobility enhancement in n-type metal oxide semiconductor field effect transistors (NMOSFET) utilizing high-& dielectrics and TiN gate electrodes. We have investigated the following gate stack issues: surface preparation, dielectric thickness, dielectric composition, post deposition annealing and TiN deposition process. Our mobility results lead to the following conclusions: 1) mobility is enhanced with ozone chemical oxide interfaces relative to NH3 nitrided interfaces, 2) mobility is enhanced with scaled HfO2 thickness 3) mobility is enhanced at low SiO2 composition HfSiO (33% SiO 2), but progress slows at high SiO2 compositions (55% SiO2), 4) mobility and Idsat are enhanced with N2 post deposition anneal (PDA) vs. NH3 PDA and 5) mobility may be enhanced with ALD TiN gate electrode relative to CVD TiN. In some cases, mobility enhancement is concurrent with gate leakage current or equivalent oxide thickness trade-offs.

AB - We report process development work targeting mobility enhancement in n-type metal oxide semiconductor field effect transistors (NMOSFET) utilizing high-& dielectrics and TiN gate electrodes. We have investigated the following gate stack issues: surface preparation, dielectric thickness, dielectric composition, post deposition annealing and TiN deposition process. Our mobility results lead to the following conclusions: 1) mobility is enhanced with ozone chemical oxide interfaces relative to NH3 nitrided interfaces, 2) mobility is enhanced with scaled HfO2 thickness 3) mobility is enhanced at low SiO2 composition HfSiO (33% SiO 2), but progress slows at high SiO2 compositions (55% SiO2), 4) mobility and Idsat are enhanced with N2 post deposition anneal (PDA) vs. NH3 PDA and 5) mobility may be enhanced with ALD TiN gate electrode relative to CVD TiN. In some cases, mobility enhancement is concurrent with gate leakage current or equivalent oxide thickness trade-offs.

KW - Atomic layer deposition

KW - EELS

KW - Electron energy loss spectroscopy

KW - HfO

KW - HfSiO

KW - High field mobility

KW - High-k dielectric

KW - MOSFET

KW - Metal gate electrode

KW - Peak mobility

KW - Post deposition anneal

KW - Surface preparation

KW - TiN

UR - http://www.scopus.com/inward/record.url?scp=33645668684&partnerID=8YFLogxK

M3 - Contribución a la conferencia

AN - SCOPUS:33645668684

SN - 1566774683

SN - 9781566774680

T3 - Proceedings - Electrochemical Society

SP - 84

EP - 93

BT - Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005

T2 - 4th International Conference on Semiconductor Technology, ISTC 2005

Y2 - 15 March 2005 through 17 March 2005

ER -

High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

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