@inproceedings{9615ac85ff51461db85c6e6c98e1bcee,
title = "High performance gate first HfSiON dielectric satisfying 45nm node requirements",
abstract = "We show an ALD based HfSiON gate dielectric scaled to 1 nm EOT with excellent performance and reliability. Furthermore, the HfSiON dielectric films are integrated in a gate first approach that includes a 1000°C-5s anneal. It is also demonstrated that this 1 nm EOT HfSiON can achieve electron and hole mobilities comparable to that of SiON. This progress is enabled due to better understanding of the relationship between charge trapping, HfSiON thickness and crystallinity. Performance and reliability improvement is attributed to reduced charge trapping due to suppressed crystallization of the optimized HfSiON films.",
author = "Quevedo-Lopez, {M. A.} and Krishnan, {S. A.} and Kirsch, {P. D.} and Li, {H. J.} and Sim, {J. H.} and C. Huffman and Peterson, {J. J.} and Lee, {B. H.} and G. Pant and Gnade, {B. E.} and Kim, {M. J.} and Wallace, {R. M.} and D. Guo and H. Bu and Ma, {T. P.}",
year = "2005",
language = "Ingl{\'e}s",
isbn = "078039268X",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "425--428",
booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",
note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",
}