High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO2 and HfSiON

Siddarth A. Krishnan; H. Rusty Harris; Paul D. Kirsch; Cristiano Krug; Manuel Quevedo-Lopez; Chadwin Young; Byoung Hun Lee; Rino Choi; Naser Chowdhury; Sagar Suthram; Scott Thompson; Gennadi Bersuker; Rajarao Jammy

doi:10.1109/IEDM.2006.346758

High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO₂ and HfSiON

Siddarth A. Krishnan, H. Rusty Harris, Paul D. Kirsch, Cristiano Krug, Manuel Quevedo-Lopez, Chadwin Young, Byoung Hun Lee, Rino Choi, Naser Chowdhury, Sagar Suthram, Scott Thompson, Gennadi Bersuker, Rajarao Jammy

Departamento de Investigación en Polímeros y Materiales

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

4 Citas (Scopus)

Resumen

A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO₂ and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized Atomic Layer Deposited (ALD) HfO₂ on Si(100) substrates with a ∼ 3.3× high field hole mobility (μ_h) enhancement vs. a Si(100) substrate. On-state drain current (I_on) obtained for the HfO₂/Si(110) is -831 μA/um at 100 nA/μm offstate drain current (I_off). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO₂ and HfSiON on Si(110). HfO₂ exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO₂ has reduced coulomb and surface roughness scattering vs. HfSiON.

Idioma original	Inglés
Título de la publicación alojada	2006 International Electron Devices Meeting Technical Digest, IEDM
DOI	https://doi.org/10.1109/IEDM.2006.346758
Estado	Publicada - 2006
Evento	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, Estados Unidos Duración: 10 dic. 2006 → 13 dic. 2006

Serie de la publicación

Nombre	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (versión impresa)	0163-1918

Conferencia

Conferencia	2006 International Electron Devices Meeting, IEDM
País/Territorio	Estados Unidos
Ciudad	San Francisco, CA
Período	10/12/06 → 13/12/06

Acceder al documento

10.1109/IEDM.2006.346758

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Krishnan, S. A., Harris, H. R., Kirsch, P. D., Krug, C., Quevedo-Lopez, M., Young, C., Lee, B. H., Choi, R., Chowdhury, N., Suthram, S., Thompson, S., Bersuker, G., & Jammy, R. (2006). High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO₂ and HfSiON. En 2006 International Electron Devices Meeting Technical Digest, IEDM Artículo 4154177 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346758

@inproceedings{73ff8938ef70455a95dd0a1eef171f62,

title = "High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO2 and HfSiON",

abstract = "A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized Atomic Layer Deposited (ALD) HfO2 on Si(100) substrates with a ∼ 3.3× high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is -831 μA/um at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO2 has reduced coulomb and surface roughness scattering vs. HfSiON.",

author = "Krishnan, {Siddarth A.} and Harris, {H. Rusty} and Kirsch, {Paul D.} and Cristiano Krug and Manuel Quevedo-Lopez and Chadwin Young and Lee, {Byoung Hun} and Rino Choi and Naser Chowdhury and Sagar Suthram and Scott Thompson and Gennadi Bersuker and Rajarao Jammy",

year = "2006",

doi = "10.1109/IEDM.2006.346758",

language = "Ingl{\'e}s",

isbn = "1424404398",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

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Krishnan, SA, Harris, HR, Kirsch, PD, Krug, C, Quevedo-Lopez, M, Young, C, Lee, BH, Choi, R, Chowdhury, N, Suthram, S, Thompson, S, Bersuker, G & Jammy, R 2006, High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO₂ and HfSiON. En 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154177, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, Estados Unidos, 10/12/06. https://doi.org/10.1109/IEDM.2006.346758

High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO₂ and HfSiON. / Krishnan, Siddarth A.; Harris, H. Rusty; Kirsch, Paul D. et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154177 (Technical Digest - International Electron Devices Meeting, IEDM).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO2 and HfSiON

AU - Krishnan, Siddarth A.

AU - Harris, H. Rusty

AU - Kirsch, Paul D.

AU - Krug, Cristiano

AU - Quevedo-Lopez, Manuel

AU - Young, Chadwin

AU - Lee, Byoung Hun

AU - Choi, Rino

AU - Chowdhury, Naser

AU - Suthram, Sagar

AU - Thompson, Scott

AU - Bersuker, Gennadi

AU - Jammy, Rajarao

PY - 2006

Y1 - 2006

N2 - A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized Atomic Layer Deposited (ALD) HfO2 on Si(100) substrates with a ∼ 3.3× high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is -831 μA/um at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO2 has reduced coulomb and surface roughness scattering vs. HfSiON.

AB - A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized Atomic Layer Deposited (ALD) HfO2 on Si(100) substrates with a ∼ 3.3× high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is -831 μA/um at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO2 has reduced coulomb and surface roughness scattering vs. HfSiON.

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U2 - 10.1109/IEDM.2006.346758

DO - 10.1109/IEDM.2006.346758

M3 - Contribución a la conferencia

AN - SCOPUS:46049086797

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -

Krishnan SA, Harris HR, Kirsch PD, Krug C, Quevedo-Lopez M, Young C et al. High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO₂ and HfSiON. En 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154177. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2006.346758