@inproceedings{18a4184fd0ff4e0695c8d805cd9f00f0,
title = "Higher permittivity rare earth-doped HfO2 and ZrO2 dielectrics for logic and memory applications",
abstract = "We demonstrate electrical properties of rare earth (RE)-doped HfO 2 and ZrO2 for application as higher permittivity (k) dielectrics in logic and memory devices. X-ray diffraction (XRD) results show that Dy, Er, and Gd doping stabilizes the higher-k tetragonal phase rather than the lower-k monoclinic phase. This preferred tetragonal phase results in a k-30. Initial electrical results show ∼3nm higher-k enables an equivalent oxide thickness (EOT) of 0.93nm. Alternatively, ∼7nm higher-k reduces leakage currents 1000x relative to HfO2 achieving <10-8 A/cm2 at an EOT of 2nm. Capacitance-voltage (C-V) data show increasing amounts of RE dopants shift flatband voltage (Vfb) in the negative direction vs. pure HfO2.",
author = "S. Govindarajan and B{\"o}scke, {T. S.} and Kirsch, {P. D.} and Quevedo-Lopez, {M. A.} and P. Sivasubramani and Song, {S. C.} and Wallace, {R. W.} and Gnade, {B. E.} and Hung, {P. Y.} and Jimmy Price and U. Schr{\"o}der and S. Ramanathan and Lee, {B. H.} and R. Jammy",
year = "2007",
doi = "10.1109/VTSA.2007.378912",
language = "Ingl{\'e}s",
isbn = "1424405858",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",
note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",
}