Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

Rodolfo A. Rodriguez-Davila; Israel Mejia; Manuel Quevedo-Lopez; Chadwin D. Young

doi:10.1109/IPFA.2018.8452171

Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

Rodolfo A. Rodriguez-Davila, Israel Mejia, Manuel Quevedo-Lopez, Chadwin D. Young

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

5 Citas (Scopus)

Resumen

Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance (gm) degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between gm degradation (i.e., interface degradation) and Δ Vt demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.

Idioma original	Inglés
Título de la publicación alojada	IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
Editorial	Institute of Electrical and Electronics Engineers Inc.
ISBN (versión impresa)	9781538649299
DOI	https://doi.org/10.1109/IPFA.2018.8452171
Estado	Publicada - 30 ago. 2018
Publicado de forma externa	Sí
Evento	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapur Duración: 16 jul. 2018 → 19 jul. 2018

Serie de la publicación

Nombre	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volumen	2018-July

Conferencia

Conferencia	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
País/Territorio	Singapur
Ciudad	Singapore
Período	16/07/18 → 19/07/18

Nota bibliográfica

Publisher Copyright:
© 2018 IEEE.

Acceder al documento

10.1109/IPFA.2018.8452171

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

Rodriguez-Davila, R. A., Mejia, I., Quevedo-Lopez, M., & Young, C. D. (2018). Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. En IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits Artículo 8452171 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2018-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2018.8452171

Rodriguez-Davila, Rodolfo A. ; Mejia, Israel ; Quevedo-Lopez, Manuel et al. / Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{ff82171b6ed440bdba4399d59e9d54d5,

title = "Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric",

abstract = "Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance (gm) degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between gm degradation (i.e., interface degradation) and Δ Vt demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.",

keywords = "Al2O3, hot carrier stress, reliablity, thin film transistors, zinc oxide",

author = "Rodriguez-Davila, {Rodolfo A.} and Israel Mejia and Manuel Quevedo-Lopez and Young, {Chadwin D.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 ; Conference date: 16-07-2018 Through 19-07-2018",

year = "2018",

month = aug,

day = "30",

doi = "10.1109/IPFA.2018.8452171",

language = "Ingl{\'e}s",

isbn = "9781538649299",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits",

address = "Estados Unidos",

}

Rodriguez-Davila, RA, Mejia, I, Quevedo-Lopez, M & Young, CD 2018, Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. En IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits., 8452171, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2018-July, Institute of Electrical and Electronics Engineers Inc., 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018, Singapore, Singapur, 16/07/18. https://doi.org/10.1109/IPFA.2018.8452171

Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. / Rodriguez-Davila, Rodolfo A.; Mejia, Israel; Quevedo-Lopez, Manuel et al.
IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. 8452171 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2018-July).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

AU - Rodriguez-Davila, Rodolfo A.

AU - Mejia, Israel

AU - Quevedo-Lopez, Manuel

AU - Young, Chadwin D.

PY - 2018/8/30

Y1 - 2018/8/30

N2 - Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance (gm) degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between gm degradation (i.e., interface degradation) and Δ Vt demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.

AB - Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance (gm) degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between gm degradation (i.e., interface degradation) and Δ Vt demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.

KW - Al2O3

KW - hot carrier stress

KW - reliablity

KW - thin film transistors

KW - zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=85053921250&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2018.8452171

DO - 10.1109/IPFA.2018.8452171

M3 - Contribución a la conferencia

AN - SCOPUS:85053921250

SN - 9781538649299

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018

Y2 - 16 July 2018 through 19 July 2018

ER -

Rodriguez-Davila RA, Mejia I, Quevedo-Lopez M, Young CD. Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. En IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc. 2018. 8452171. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2018.8452171

Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

Resumen

Serie de la publicación

Conferencia

Nota bibliográfica

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto