Hysycvd/dn processing of nitride porous composites

J. C. Flores-García, M. I. Pech-Canul, G. Reyes, S. A. Gallardo-Heredia, A. L. Leal-Cruz

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Because of the relevance of its chemical, mechanical, thermal, electrical and optical properties, silicon nitride and oxynitride are considered highly technological materials. In this paper, authors present a study on the synthesis of Si3N4 and Si2N2O during the processing of silicon porous particulate substrates via hybrid precursor system chemical vapor deposition/direct nitridation (HYSYCVD/DN). The effect of different processing parameters (nitrogen precursor atmosphere, time, gas flow rate and amount of Na2SiF6) on the amount and morphology of the Si/Si3N4/Si2N2O composites was investigated using a Taguchi design experiment. Subsequently, the optimization of the process parameters on the formation of nitrides by analysis of variance (ANOVA) was performed. The specimens were analyzed by XRD, SEM and EDS. In order to elucidate the formation pathway of nitride phases in the processed samples, the study was complemented by thermodynamic predictions of the possible reactions within the reacting system using a software and database. Finally, mechanical properties were evaluated in four-point bending tests and using an ultrasonic method. Experimental results show that the microstructure and properties were influenced by the processing conditions.

Idioma originalInglés
Título de la publicación alojadaSAMPE Baltimore 2015 Conference and Exhibition
EditorialSoc. for the Advancement of Material and Process Engineering
ISBN (versión digital)9781934551196
EstadoPublicada - 2015
EventoSAMPE Baltimore 2015 Conference and Exhibition - Baltimore, Estados Unidos
Duración: 18 may. 201521 may. 2015

Serie de la publicación

NombreInternational SAMPE Technical Conference


ConferenciaSAMPE Baltimore 2015 Conference and Exhibition
País/TerritorioEstados Unidos

Nota bibliográfica

Publisher Copyright:
Copyright 2015. Used by the Society of the Advancement of Material and Process Engineering with permission.


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