TY - GEN
T1 - Impact of nitrogen on PBTI characteristics of HfSiON/TiN gate stacks
AU - Krishnan, Siddarth A.
AU - Quevedo-Lopez, Manuel
AU - Li, Hong Jyh
AU - Kirsch, Paul
AU - Choi, Rino
AU - Young, Chadwin
AU - Peterson, Jeff J.
AU - Lee, Byoung Hun
AU - Bersuker, Gennadi
AU - Lee, Jack C.
PY - 2006
Y1 - 2006
N2 - The impact of nitrogen on charge trapping induced positive bias temperature instability (PBTI) characteristics in HfSiON/TiN gate stacks is investigated. While thickness is found to be the primary parameter to reduce charge trapping, plasma nitrogen reduces PBTI effects in thick (2.7 nm) HfSiON films. Thin films (1.8 nm) show significantly lower threshold voltage (VTH) shift than thick films and seem to be insensitive to N content. Thermal nitridation exacerbates the PBTI effects more than plasma nitridation.
AB - The impact of nitrogen on charge trapping induced positive bias temperature instability (PBTI) characteristics in HfSiON/TiN gate stacks is investigated. While thickness is found to be the primary parameter to reduce charge trapping, plasma nitrogen reduces PBTI effects in thick (2.7 nm) HfSiON films. Thin films (1.8 nm) show significantly lower threshold voltage (VTH) shift than thick films and seem to be insensitive to N content. Thermal nitridation exacerbates the PBTI effects more than plasma nitridation.
UR - http://www.scopus.com/inward/record.url?scp=34250773443&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2006.251237
DO - 10.1109/RELPHY.2006.251237
M3 - Contribución a la conferencia
AN - SCOPUS:34250773443
SN - 0780394992
SN - 0780394984
SN - 9780780394988
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 325
EP - 328
BT - 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
T2 - 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Y2 - 26 March 2006 through 30 March 2006
ER -