Ink-jet printed CdS thin film transistors fabricated in-situ by micro-reaction

J. C. Ramos, D. Kabir, J. I. Mejia, C. A. Martinez, M. A. Quevedo-Lopez

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

In this work, we report a simple, mask-free, very low material wastage method to deposit nanocrystalline CdS thin films as semiconducting layer for thin film transistors (TFTs). This method combines on-chip synthesis and ink-jet printing techniques. The physicochemical and morphological properties of the films were studied in function of jetting parameters including printed volume and substrate temperature. The fabricated TFTs have n-type conduction with resistivities in the order ~1×105 Ω·cm, on/off ratios of ~103, VT of ~3.4 V and mobility (μSAT) of ~0.1 cm2/V·s. This approach demonstrates a new and efficient solution-process route for manufacturing semiconductor CdS thin films with performance comparable or better than several organic n-type semiconductors.

Idioma originalInglés
Título de la publicación alojadaTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Páginas265-268
Número de páginas4
EstadoPublicada - 2013
Publicado de forma externa
EventoNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, Estados Unidos
Duración: 12 may. 201316 may. 2013

Serie de la publicación

NombreTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volumen2

Conferencia

ConferenciaNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
País/TerritorioEstados Unidos
CiudadWashington, DC
Período12/05/1316/05/13

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