Interaction between Cd and Te in InAs

V. N. Morozov; V. G. Chernov

doi:10.1007/BF00892484

Interaction between Cd and Te in InAs

V. N. Morozov^*, V. G. Chernov

^*Autor correspondiente de este trabajo

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Resumen

The interaction between Cd and Te in InAs crystals grown using the Bridgeman method has been studied. It is shown that at the crystallization temperature of InAs and with total donor and acceptor concentration of less than 10¹⁹ cm^-3, there is no interaction between the impurities either in the liquid or solid phases. When the ingot is cooled down to low temperatures, some of the Cd and Te are bonded into electrically neutral donor-acceptor pairs.

Idioma original	Inglés
Páginas (desde-hasta)	1609-1612
Número de páginas	4
Publicación	Soviet Physics Journal
Volumen	21
N.º	12
DOI	https://doi.org/10.1007/BF00892484
Estado	Publicada - dic. 1978
Publicado de forma externa	Sí

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abstract = "The interaction between Cd and Te in InAs crystals grown using the Bridgeman method has been studied. It is shown that at the crystallization temperature of InAs and with total donor and acceptor concentration of less than 1019 cm-3, there is no interaction between the impurities either in the liquid or solid phases. When the ingot is cooled down to low temperatures, some of the Cd and Te are bonded into electrically neutral donor-acceptor pairs.",

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AB - The interaction between Cd and Te in InAs crystals grown using the Bridgeman method has been studied. It is shown that at the crystallization temperature of InAs and with total donor and acceptor concentration of less than 1019 cm-3, there is no interaction between the impurities either in the liquid or solid phases. When the ingot is cooled down to low temperatures, some of the Cd and Te are bonded into electrically neutral donor-acceptor pairs.

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Interaction between Cd and Te in InAs

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