Investigation of X-ray Irradiation Impact on CeRAM

A. A. Gruszecki*, L. Fernandez-Izquierdo, S. V. Suryavanshi, G. Yeric, M. Quevedo-Lopez, C. D. Young

*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

CeRAM devices were fabricated and electrically characterized following x-ray irradiation exposure for the purpose of investigating device reliability and operation in harsh environments. CeRAM were subjected to a total ionizing dose (TID) of up to 1 Mrad, which was found to induce resistance switching (RS) of the memory state. TID was determined to have no impact on RS parameters, including both switching voltages and resistance levels.

Idioma originalInglés
Título de la publicación alojada2023 IEEE International Integrated Reliability Workshop, IIRW 2023
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9798350327274
DOI
EstadoPublicada - 2023
Evento2023 IEEE International Integrated Reliability Workshop, IIRW 2023 - South Lake Tahoe, Estados Unidos
Duración: 8 oct. 202312 oct. 2023

Serie de la publicación

NombreIEEE International Integrated Reliability Workshop Final Report
ISSN (versión impresa)1930-8841
ISSN (versión digital)2374-8036

Conferencia

Conferencia2023 IEEE International Integrated Reliability Workshop, IIRW 2023
País/TerritorioEstados Unidos
CiudadSouth Lake Tahoe
Período8/10/2312/10/23

Nota bibliográfica

Publisher Copyright:
© 2023 IEEE.

Huella

Profundice en los temas de investigación de 'Investigation of X-ray Irradiation Impact on CeRAM'. En conjunto forman una huella única.

Citar esto