Resumen
CeRAM devices were fabricated and electrically characterized following x-ray irradiation exposure for the purpose of investigating device reliability and operation in harsh environments. CeRAM were subjected to a total ionizing dose (TID) of up to 1 Mrad, which was found to induce resistance switching (RS) of the memory state. TID was determined to have no impact on RS parameters, including both switching voltages and resistance levels.
Idioma original | Inglés |
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Título de la publicación alojada | 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 |
Editorial | Institute of Electrical and Electronics Engineers Inc. |
ISBN (versión digital) | 9798350327274 |
DOI | |
Estado | Publicada - 2023 |
Evento | 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 - South Lake Tahoe, Estados Unidos Duración: 8 oct. 2023 → 12 oct. 2023 |
Serie de la publicación
Nombre | IEEE International Integrated Reliability Workshop Final Report |
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ISSN (versión impresa) | 1930-8841 |
ISSN (versión digital) | 2374-8036 |
Conferencia
Conferencia | 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 |
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País/Territorio | Estados Unidos |
Ciudad | South Lake Tahoe |
Período | 8/10/23 → 12/10/23 |
Nota bibliográfica
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