Invited paper: Flexible cmos and electrophoretic displays

David R. Allee, Sameer Venugopal, Roshith Krishna, Korhan Kaftanoglu, Manuel A. Quevedo-Lopez, Shrinivas Gowrisanker, Adrianno E. Avendano-Bolivar, Husam N. Alshareef, Bruce Gnade

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2 Citas (Scopus)

Resumen

Flexible CMOS has been achieved by combining nMOS a-Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a-Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.

Idioma originalInglés
Páginas (desde-hasta)760-763
Número de páginas4
PublicaciónDigest of Technical Papers - SID International Symposium
Volumen40
N.º1
DOI
EstadoPublicada - 2009
Evento2009 Vehicles and Photons Symposium - Dearborn, MI, Estados Unidos
Duración: 15 oct. 200916 oct. 2009

Nota bibliográfica

Publisher Copyright:
© 2009 SID.

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