ISSLEDOVANIE DONORNO-AKTSEPTORNOGO VZAIMODEISTVIYA V TVERDYKH RASTVORAKH (InAs)//1// minus //x(CdTe)//x METODOM MIKROTVERDOSTI.

An anomalous concentration dependence of the microhardness in (InAs)//1// minus //x(CdTe)//x solid solutions near the pure components is noted which is attributed to a change in the degree of dissociation of the components. A method of determining the degree of dissociation of the components and the reaction constant of donor-acceptor pair formation in solid solutions of semiconductors with heterovalent substitution from the results of microhardness measurements is proposed. The estimated interaction energies of donor-acceptor pairs in InAs and CdTe are close to the Conlomb energies.