Low temperature, highly stable ZnO thin-film transistors

Rodolfo A. Rodriguez-Davila, Richard A. Chapman, Zeshaan H. Shamsi, S. J. Castillo, Chadwin D. Young, Manuel A. Quevedo-Lopez*

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

1 Cita (Scopus)

Resumen

A low-temperature and straightforward fabrication process for ZnO thin-film transistors (TFTs) with near-zero aging and negligible instability enabled by using an ultrathin oxide as a top-passivation layer is demonstrated. The process features bottom-gate top-contacts ZnO TFTs with ultrathin HfO2 or Al2O3 as passivation layers on top of the TFT followed by post-fabrication annealing (PFA). Devices with ultra-thin capping films of Al2O3 followed by a 150 °C PFA show threshold voltage shift (ΔVTH) of <1% after bias stress and negligible shift after aging. The devices show saturation threshold voltage (VTH-SAT) of 2.70 V, saturation mobilities larger than 10 cm2/V·s, and current ION/IOFF ratios >106. On the contrary, devices without nanofilm show similar performance to those with Al2O3 but show more considerable instability to aging and bias stress (ΔVTH > 5%). Also, devices with HfO2 as a capping layer shows severe instability (ΔVTH > 40%). A degradation mechanism to explain the improved aging and reliability performance is also discussed.

Idioma originalInglés
Número de artículo112063
PublicaciónMicroelectronic Engineering
Volumen279
DOI
EstadoPublicada - 15 jul. 2023

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