Low temperature hot filament chemical vapor deposition of Ultrananocrystalline Diamond films with tunable sheet resistance for electronic power devices

Keyphrases

• Applications in Electronics 25%
• Argon 25%
• Chemical Bond 25%
• Chemical Vapor Deposition Processes 25%
• Complementary Analytical Techniques 25%
• Dangling Bonds 25%
• Disordered Graphene 50%
• Electronic Power Devices 100%
• Filament-substrate Distance 75%
• Gas Atom 25%
• Grain Boundary 25%
• Graphite 50%
• Graphite Film 25%
• Hot Filament Chemical Vapor Deposition (HFCVD) 100%
• Hot Surface 25%
• Inert Gas 25%
• Low Sheet Resistance 25%
• Low Temperature 100%
• Nanocrystalline Diamond 100%
• Nanocrystalline Diamond Films 100%
• Precursor Molecules 25%
• Relativity 25%
• Resistivity 25%
• Sheet Resistance 100%
• Substrate Reaction 25%
• Substrate Temperature 25%
• Surface Substrate 25%
• Trans-polyacetylene 50%

Engineering

• Chemical Vapor Deposition 100%
• Critical Role 14%
• Dangling Bond 14%
• Deposition Process 14%
• Diamond 100%
• Diamond Phase 14%
• Experimental Result 14%
• Gas Atom 14%
• Graphene 28%
• Hot Surface 14%
• Low-Temperature 100%
• Methane 14%
• Mixed Phase 14%
• Potential Application 14%
• Power Electronic Device 100%
• Precursor Molecule 14%
• Sheet Resistance 100%
• Substrate Distance 42%
• Substrate Temperature 14%
• Surface Distance 14%
• Vapor Deposition 100%

Material Science

• Analytical Method 25%
• Chemical Bonding 25%
• Diamond 100%
• Diamond Films 100%
• Electrical Resistivity 25%
• Film 75%
• Grain Boundary 25%
• Graphene 50%
• Hot-Filament Chemical Vapor Deposition 100%
• Inert Gas 25%
• Nucleation 25%
• Polyacetylene 50%
• Power Device 100%
• Surface (Surface Science) 75%
• Vapor Phase Deposition 25%