Microstructural and Optical Characterization of Single and Multilayers of ZnO for TFTs Active Layer

In this work, microstructural and optical characterization of single and multilayers of ZnO films intended for thin film transistors is presented. ZnO films from one to five layers were processed by chemical bath deposition at 70 C during 90 minutes to form each layer. After ZnO deposition, the films were annealed. Obtained films were characterized to determine their microstructural evolution and optical behaviour. Under the experimental conditions, five different films were obtained, but only, films with four layers presents potential to be considered as active layer in thin film transistors and correspond to compact and uniform films with an appropriated optical behaviour.