Mobility enhancement of high-k gate stacks through reduced transient charging

P. D. Kirsch*, J. H. Sim, S. C. Song, S. Krishnan, J. Peterson, H. J. Li, M. Quevedo-Lopez, C. D. Young, R. Choi, N. Moumen, P. Majhi, Q. Wang, J. G. Ekerdt, G. Bersuker, B. H. Lee

*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

28 Citas (Scopus)

Resumen

We report a high performance NFET with a HfO2/TiN gate stack showing high field (1 MV/cm) D.C. mobility of 194 cm2/V-s (80% univ. SiO2) and peak D.C. mobility of 239 cm2/V-s at EOT=9.5Å. These mobility results are among the best reported for HfO 2 with sub-10 Å EOT and represent a potential gate dielectric solution for 45 nm CMOS technologies. A 2× mobility improvement was realized by thinning HfO2 from Tphys=4.0 nm to 2.0 nm. The mechanism for mobility improvement is shown to be reduced transient charge trapping. Issues associated with scaling HfO2 including film continuity, density and growth incubation are studied with low energy ion scattering (LEIS), X-ray reflectivity (XRR) and Rutherford backscattering (RBS) and indicate atomic layer deposition (ALD) HfO2 can scale below Tphys= 2.0 nm. While the mobility advancement with 2.0 nm HfO 2 is important, an additional concurrent advancement is improved Vt stability. Constant voltage stress results show ΔV t improves 2× after 1000s stress at 1.8V as thickness is reduced in the range 2.0-4.0 nm.

Idioma originalInglés
Título de la publicación alojadaProceedings of ESSDERC 2005
Subtítulo de la publicación alojada35th European Solid-State Device Research Conference
Páginas367-370
Número de páginas4
DOI
EstadoPublicada - 2005
EventoESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, Francia
Duración: 12 sep. 200516 sep. 2005

Serie de la publicación

NombreProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volumen2005

Conferencia

ConferenciaESSDERC 2005: 35th European Solid-State Device Research Conference
País/TerritorioFrancia
CiudadGrenoble
Período12/09/0516/09/05

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