Modeling and SPICE Simulation of the CdS/CdTe Neutron Detectors Integrated with Si-Poly TFTs Amplifiers

Carlos A. Hernandez-Gutierrez, Carlos Avila-Avendano, Horacio I. Solis-Cisneros, Jorge Conde, Perla Y. Sevilla-Camacho, Manuel A. Quevedo-Lopez

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

4 Citas (Scopus)

Resumen

In this work, it is presented a unified model to integrate a radiation detector on a single chip using TFTs-based amplifiers, to fabricate a low-cost thermal neutron detector system. The model is based on the current-voltage experimental measurements of the CdS/CdTe detector and CMOS Si-Poly TFTs technology. Parameters obtained by I-V and C - V analysis were introduced into Smart SPICE to design the amplifiers. The output voltage was simulated for a neutron capture event. Three amplification topologies were studied, obtaining an output voltage in the range of 180 to 260 mV with a generated photocurrent pulse around 3.5 \mu \text{A}, which is high enough to be interfaced with a microcontroller. The neutron detector is integrated into TFT amplifiers with a gain of around 50 dB and bandwidth of 4.7 MHz at -3 dB.

Idioma originalInglés
Páginas (desde-hasta)1310-1315
Número de páginas6
PublicaciónIEEE Transactions on Nuclear Science
Volumen69
N.º6
DOI
EstadoPublicada - 1 jun. 2022

Nota bibliográfica

Publisher Copyright:
© 1963-2012 IEEE.

Huella

Profundice en los temas de investigación de 'Modeling and SPICE Simulation of the CdS/CdTe Neutron Detectors Integrated with Si-Poly TFTs Amplifiers'. En conjunto forman una huella única.

Citar esto