Nanostructured fibers of A-SI3N4 deposited by HYSY-CVD

E. B. Acosta-Enriquez; M. C. Acosta-Enriquez; R. Castillo-Ortega; M. A.E. Zayas; M. I. Pech-Canul

Nanostructured fibers of A-SI₃N₄ deposited by HYSY-CVD

E. B. Acosta-Enriquez^*, M. C. Acosta-Enriquez, R. Castillo-Ortega, M. A.E. Zayas, M. I. Pech-Canul

^*Autor correspondiente de este trabajo

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

3 Citas (Scopus)

Resumen

The alpha type silicon nitride nanostructured fibers were obtained by hybrid system chemical vapor deposition (HYSY-CVD) method, with low manufacturing costs, fabricating good quality deposits at atmospheric pressure. The α-Si₃N₄ fibers on silicon wafers <111> were produced with a diameter between 400 to 500 nm using a temperature of 1200 °C. FTIR showed that the deposit is free of hydrogen and study shows Raman vibrational modes corresponding to α-Si₃N₄.

Idioma original	Inglés
Páginas (desde-hasta)	601-605
Número de páginas	5
Publicación	Digest Journal of Nanomaterials and Biostructures
Volumen	11
N.º	2
Estado	Publicada - 1 abr. 2016

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Publisher Copyright:
© 2016, Inst Materials Physics. All rights reserved.

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abstract = "The alpha type silicon nitride nanostructured fibers were obtained by hybrid system chemical vapor deposition (HYSY-CVD) method, with low manufacturing costs, fabricating good quality deposits at atmospheric pressure. The α-Si3N4 fibers on silicon wafers <111> were produced with a diameter between 400 to 500 nm using a temperature of 1200 °C. FTIR showed that the deposit is free of hydrogen and study shows Raman vibrational modes corresponding to α-Si3N4.",

keywords = "Ceramic material, HYSY-CVD, Nano-materials, Nanostructured fibers, α-SiN",

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AU - Acosta-Enriquez, E. B.

AU - Acosta-Enriquez, M. C.

AU - Castillo-Ortega, R.

AU - Zayas, M. A.E.

AU - Pech-Canul, M. I.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - The alpha type silicon nitride nanostructured fibers were obtained by hybrid system chemical vapor deposition (HYSY-CVD) method, with low manufacturing costs, fabricating good quality deposits at atmospheric pressure. The α-Si3N4 fibers on silicon wafers <111> were produced with a diameter between 400 to 500 nm using a temperature of 1200 °C. FTIR showed that the deposit is free of hydrogen and study shows Raman vibrational modes corresponding to α-Si3N4.

AB - The alpha type silicon nitride nanostructured fibers were obtained by hybrid system chemical vapor deposition (HYSY-CVD) method, with low manufacturing costs, fabricating good quality deposits at atmospheric pressure. The α-Si3N4 fibers on silicon wafers <111> were produced with a diameter between 400 to 500 nm using a temperature of 1200 °C. FTIR showed that the deposit is free of hydrogen and study shows Raman vibrational modes corresponding to α-Si3N4.

KW - Ceramic material

KW - HYSY-CVD

KW - Nano-materials

KW - Nanostructured fibers

KW - α-SiN

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M3 - Artículo

SN - 1842-3582

VL - 11

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JO - Digest Journal of Nanomaterials and Biostructures

JF - Digest Journal of Nanomaterials and Biostructures

IS - 2