On the DC extraction of the asymmetric parasitic source and drain resistances for MOSFETs

Rodolfo Rodriguez-Davila, Adelmo Ortiz-Conde*, Carlos Avila-Avendano, Zeshaan Shamsi, Manuel A. Quevedo-Lopez

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

6 Citas (Scopus)

Resumen

Two different parameter extraction methods are proposed in this article. First, a simple DC method is presented to extract the difference between the drain and source series resistance of MOSFETs. This method is valid for any three- or four-terminal MOSFET and it can be used in linear, triode or saturation region. Second, an integration-based method is proposed to extract the drain resistance and the source resistance of thin-film MOSFETs. Both methods were tested using simulated and measured data of two different devices: zinc oxide (ZnO) and polysilicon TFTs.

Idioma originalInglés
Número de artículo107700
PublicaciónSolid-State Electronics
Volumen164
DOI
EstadoPublicada - feb. 2020
Publicado de forma externa

Nota bibliográfica

Publisher Copyright:
© 2019 Elsevier Ltd

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