Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

E. Fuentes-Fernandez; L. Baldenegro-Perez; M. Quevedo-Lopez; Bruce Gnade; A. Hande; P. Shah; H. N. Alshareef

doi:10.1016/j.sse.2011.05.027

Optimization of Pb(Zr_0.53,Ti_0.47)O₃ films for micropower generation using integrated cantilevers

E. Fuentes-Fernandez
, L. Baldenegro-Perez
, M. Quevedo-Lopez
, Bruce Gnade
, A. Hande
, P. Shah
, H. N. Alshareef^*

^*Autor correspondiente de este trabajo

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

7 Citas (Scopus)

Resumen

Lead zirconate titanate, Pb(Zr_0.53,Ti_0.47)O ₃ or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO₂/Si substrates with a sol-gel derived ZrO₂ buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO₂ surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.

Idioma original	Inglés
Páginas (desde-hasta)	89-93
Número de páginas	5
Publicación	Solid-State Electronics
Volumen	63
N.º	1
DOI	https://doi.org/10.1016/j.sse.2011.05.027
Estado	Publicada - sep. 2011
Publicado de forma externa	Sí

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@article{b084b0398c8e4398911293664d3509ca,

title = "Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers",

abstract = "Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.",

keywords = "Cantilever, Integration, MEMS, PZT, Perovskite, Piezoelectric material",

author = "E. Fuentes-Fernandez and L. Baldenegro-Perez and M. Quevedo-Lopez and Bruce Gnade and A. Hande and P. Shah and Alshareef, \{H. N.\}",

note = "Funding Information: The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process. ",

year = "2011",

month = sep,

doi = "10.1016/j.sse.2011.05.027",

language = "Ingl{\'e}s",

volume = "63",

pages = "89--93",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

AU - Fuentes-Fernandez, E.

AU - Baldenegro-Perez, L.

AU - Quevedo-Lopez, M.

AU - Gnade, Bruce

AU - Hande, A.

AU - Shah, P.

AU - Alshareef, H. N.

N1 - Funding Information: The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process.

PY - 2011/9

Y1 - 2011/9

N2 - Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.

AB - Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.

KW - Cantilever

KW - Integration

KW - MEMS

KW - PZT

KW - Perovskite

KW - Piezoelectric material

UR - https://www.scopus.com/pages/publications/80051793536

U2 - 10.1016/j.sse.2011.05.027

DO - 10.1016/j.sse.2011.05.027

M3 - Artículo

SN - 0038-1101

VL - 63

SP - 89

EP - 93

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1