P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

A. Carrillo-Castillo, A. Salas-Villasenor, I. Mejia, S. Aguirre-Tostado, B. E. Gnade, M. A. Quevedo-López*

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

31 Citas (Scopus)

Resumen

In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was ∼ 0.09 cm 2 V - 1 s - 1 whereas the mobility for devices annealed at 150 °C/h in forming gas increased up to ∼ 0.14 cm 2 V - 1 s - 1. Besides the thermal annealing, the entire fabrications process was maintained below 100 °C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 °C anneal as well as a function of the PbS active layer thicknesses.

Idioma originalInglés
Páginas (desde-hasta)3107-3110
Número de páginas4
PublicaciónThin Solid Films
Volumen520
N.º7
DOI
EstadoPublicada - 31 ene. 2012
Publicado de forma externa

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