Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

Carlos Avila-Avendano, Adelmo Ortiz-Conde*, Jesus A. Caraveo-Frescas, Manuel A. Quevedo-Lopez

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

3 Citas (Scopus)

Resumen

A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.

Idioma originalInglés
Páginas (desde-hasta)550-556
Número de páginas7
PublicaciónTransactions on Electrical and Electronic Materials
Volumen22
N.º4
DOI
EstadoPublicada - ago. 2021

Nota bibliográfica

Publisher Copyright:
© 2020, The Korean Institute of Electrical and Electronic Material Engineers.

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