Photoluminescence in nanostructured alpha-silicon nitride coatings (α-Si3N4)

E. B. Acosta-Entriquez*, R. C. Carrillo-Torres, M. C. Acosta Enriquez, R. Castillo Ortega, M. A.E. Zayas, S. J. Castillo, M. I. Pech-Canul

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva


In this work α-Si3N4 coatings grown by hybrid chemical vapor deposition system (HYSY-CVD) are presented. Two different morphologies, pores and fibers, were obtained using two different flows, 45 ml/min (flow 1) and 60 ml/min (flow 2) over a period of 120 min, of nitrogen:ammonia gas mixture (95%:5%). This coatings presents nanocrystals of 20 nm and 36 nm for 1 and 2 flows, respectively, this parameters were obtained by Debye-Scherer formulation. Band gaps of 1.95eV for flow 1 and 1.90 eV for flow 2 were derived from UV-Vis reflectance. The Photoluminescence spectra reveal emissions at 477 nm for flow 1 and 470 nm for flow 2.

Idioma originalInglés
Páginas (desde-hasta)111-117
Número de páginas7
PublicaciónDigest Journal of Nanomaterials and Biostructures
EstadoPublicada - 1 ene. 2017

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© 2017, Johns Hopkins University Press. All rights reserved.


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