TY - JOUR
T1 - Polyaniline salts of toluenesulfonate and sulfonated poly(p-vinylphenol)
AU - Inoue, M.
AU - Medrano, F.
AU - Castillo-Ortega, M. M.
AU - Asano, K.
AU - Nakamura, M.
N1 - Funding Information:
ACKNOWLEDGEMENT This work was supported by the Direccibn General de Investigaci6n Cientifica y Superacibn Acad~mica, SEP (91-01-26-001-669).
PY - 1993/1/1
Y1 - 1993/1/1
N2 - Polyaniline salts of toluenesulfonate (TS) and sulfonated poly(p-vinylphenol) (SPVP) have been prepared. The polyaniline salt of TS exhibited a room-temperature electrical conductivity of 10 S cm-1. The activation energy for electrical conduction was 0.02 eV, which was significantly smaller than the value 0.04 eV reported for other salts. The aromatic nature of the organic anion is expected to enhance the interchain diffusion of charge carriers. The electrical conductivity of the polyaniline salt of the polymer anion was of the order of 10-4 S cm-1. A polyaniline base derived from the SPVP salt was water-soluble in the presence of excess NaSPVP, due to complexation between the two polymers.
AB - Polyaniline salts of toluenesulfonate (TS) and sulfonated poly(p-vinylphenol) (SPVP) have been prepared. The polyaniline salt of TS exhibited a room-temperature electrical conductivity of 10 S cm-1. The activation energy for electrical conduction was 0.02 eV, which was significantly smaller than the value 0.04 eV reported for other salts. The aromatic nature of the organic anion is expected to enhance the interchain diffusion of charge carriers. The electrical conductivity of the polyaniline salt of the polymer anion was of the order of 10-4 S cm-1. A polyaniline base derived from the SPVP salt was water-soluble in the presence of excess NaSPVP, due to complexation between the two polymers.
UR - http://www.scopus.com/inward/record.url?scp=0027557009&partnerID=8YFLogxK
M3 - Artículo de la conferencia
SN - 0379-6779
VL - 55
SP - 1057
EP - 1061
JO - Synthetic Metals
JF - Synthetic Metals
IS - 2 -3 pt 2
T2 - Proceedings of the International Conference on Science and Technology of Metals - ICSM'92
Y2 - 12 August 1992 through 18 August 1992
ER -